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参数资料
| 型号： | AT45DB081B-TC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC |
| 中文描述： | 1081344 X 8 FLASH 2.7V PROM, PDSO28 |
| 封装： | 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28 |
| 文件页数： | 6/32页 |
| 文件大小： | 414K |
| 代理商： | AT45DB081B-TC |
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6
AT45DB081B
2225C
–
12/01
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE:
A
previously erased page within main memory can be programmed with the contents of
either buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 88H for buffer 1 or
89H for buffer 2, must be followed by the three reserved bits, 12 address bits
(PA11 - PA0) that specify the page in the main memory to be written, and nine addi-
tional don
’
t care bits. When a low-to-high transition occurs on the CS pin, the part will
program the data stored in the buffer into the specified page in the main memory. It is
necessary that the page in main memory that is being programmed has been previously
erased. The programming of the page is internally self-timed and should take place in a
maximum time of t
P
. During this time, the status register will indicate that the part is
busy.
Successive page programming operations without doing a page erase are not recom-
mended. In other words, changing bytes within a page from a
“
1
”
to a
“
0
”
during multiple
page programming operations without erasing that page is not recommended.
PAGE ERASE:
The optional Page Erase command can be used to individually erase
any page in the main memory array allowing the Buffer to Main Memory Page Program
without Built-in Erase command to be utilized at a later time. To perform a Page Erase,
an opcode of 81H must be loaded into the device, followed by three reserved bits,
12 address bits (PA11 - PA0), and nine don
’
t care bits. The 12 address bits are used to
specify which page of the memory array is to be erased. When a low-to-high transition
occurs on the CS pin, the part will erase the selected page to 1s. The erase operation is
internally self-timed and should take place in a maximum time of t
PE
. During this time,
the status register will indicate that the part is busy.
BLOCK ERASE:
A block of eight pages can be erased at one time allowing the Buffer
to Main Memory Page Program without Built-in Erase command to be utilized to reduce
programming times when writing large amounts of data to the device. To perform a
Block Erase, an opcode of 50H must be loaded into the device, followed by three
reserved bits, nine address bits (PA11 - PA3), and 12 don
’
t care bits. The nine address
bits are used to specify which block of eight pages is to be erased. When a low-to-high
transition occurs on the CS pin, the part will erase the selected block of eight pages to
1s. The erase operation is internally self-timed and should take place in a maximum
time of t
BE
. During this time, the status register will indicate that the part is busy.
Block Erase Addressing
PA11
PA10
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
0
0
1
1
X
X
X
3
1
1
1
1
1
1
1
0
0
X
X
X
508
1
1
1
1
1
1
1
0
1
X
X
X
509
1
1
1
1
1
1
1
1
0
X
X
X
510
1
1
1
1
1
1
1
1
1
X
X
X
511
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB081B-TC-2.5 | SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC |
| AT45DB081B-TI | SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC |
| AT45DB081D | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D_07 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-MU | 8-megabit 2.5-volt or 2.7-volt DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081B-TC-2.5 | 功能描述:闪存 8M SERIAL 2.7V - 2.5V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081B-TI | 功能描述:闪存 8M SERIAL 2.7V - 2.7V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081B-TI-2.5 | 功能描述:闪存 8M SERIAL 2.7V - 2.5V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081B-TU | 功能描述:闪存 8M 28 I/O Pins SPI 264B 2.7V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081D | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash |
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