参数资料
型号: AT45DB081B-TI
厂商: ATMEL CORP
元件分类: DRAM
英文描述: SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC
中文描述: 1081344 X 8 FLASH 2.7V PROM, PDSO28
封装: 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28
文件页数: 12/32页
文件大小: 414K
代理商: AT45DB081B-TI
12
AT45DB081B
2225C
12/01
Note:
1. After power is applied and V
CC
is at the minimum specified datasheet value, the system should wait 20 ms before an opera-
tional mode is started.
Note:
1. I
cc1
during a buffer read is 20mA maximum.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under
Absolute
Maximum Ratings
may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
DC and AC Operating Range
AT45DB081B (2.5V Version)
AT45DB081B
Operating Temperature
(Case)
Com.
0
°
C to 70
°
C
0
°
C to 70
°
C
Ind.
-40
°
C to 85
°
C
V
CC
Power Supply
(1)
2.5V to 3.6V
2.7V to 3.6V
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
SB
Standby Current
CS, RESET, WP = V
CC
, all inputs
at CMOS levels
2
10
μA
I
CC1
(1)
Active Current, Read
Operation
f = 20 MHz; I
OUT
= 0 mA;
V
CC
= 3.6V
4
10
mA
I
CC2
Active Current,
Program/Erase Operation
V
CC
= 3.6V
15
35
mA
I
LI
Input Load Current
V
IN
= CMOS levels
1
μA
I
LO
Output Leakage Current
V
I/O
= CMOS levels
1
μA
V
IL
Input Low Voltage
0.6
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA; V
CC
= 2.7V
0.4
V
V
OH
Output High Voltage
I
OH
= -100 μA
V
CC
- 0.2V
V
相关PDF资料
PDF描述
AT45DB081D 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_07 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-MU 8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D-MU-2.5 8-megabit 2.5-volt or 2.7-volt DataFlash
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相关代理商/技术参数
参数描述
AT45DB081B-TI-2.5 功能描述:闪存 8M SERIAL 2.7V - 2.5V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT45DB081B-TU 功能描述:闪存 8M 28 I/O Pins SPI 264B 2.7V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT45DB081D 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_07 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB081D_08 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash