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参数资料
| 型号： | AT45DB081D-MU |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| 中文描述： | 8M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 6 X 5 MM, 1 MM HEIGHT, GREEN, PLASTIC, MLF-8 |
| 文件页数： | 6/53页 |
| 文件大小： | 1105K |
| 代理商： | AT45DB081D-MU |
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6
3596E–DFLASH–02/07
AT45DB081D
Continuous Array Read, the device will continue reading at the beginning of the next page with
no delays incurred during the page boundary crossover (the crossover from the end of one page
to the beginning of the next page).
W
hen the last bit in the main memory array has been read,
the device will continue reading back at the beginning of the first page of memory. As with cross-
ing over page boundaries, no delays will be incurred when wrapping around from the end of the
array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output
pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by
the f
CAR1
specification. The Continuous Array Read bypasses both data buffers and leaves the
contents of the buffers unchanged.
6.2
Continuous Array Read (High Frequency Mode: 0BH): Up to 66 MHz
This command can be used with the serial interface to read the main memory array sequentially
in high speed mode for any clock frequency up to the maximum specified by f
CAR1
. To perform a
continuous read array with the page size set to 264 bytes, the CS must first be asserted then an
opcode 0BH must be clocked into the device followed by three address bytes and a dummy
byte. The first 12 bits (PA11 - PA0) of the 21-bit address sequence specify which page of the
main memory array to read, and the last 9 bits (BA8 - BA0) of the 21-bit address sequence spec-
ify the starting byte address within the page. To perform a continuous read with the page size
set to 256 bytes, the opcode, 0BH, must be clocked into the device followed by three address
bytes (A19 - A0) and a dummy byte. Following the dummy byte, additional clock pulses on the
SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the read-
ing of data.
W
hen the end of a page in the main memory is reached during a Continuous Array
Read, the device will continue reading at the beginning of the next page with no delays incurred
during the page boundary crossover (the crossover from the end of one page to the beginning of
the next page).
W
hen the last bit in the main memory array has been read, the device will con-
tinue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the
beginning of the array. A low-to-high transition on the CS pin will terminate the read operation
and tri-state the output pin (SO). The maximum SCK frequency allowable for the Continuous
Array Read is defined by the f
CAR1
specification. The Continuous Array Read bypasses both
data buffers and leaves the contents of the buffers unchanged.
6.3
Continuous Array Read (Low Frequency Mode: 03H): Up to 33 MHz
This command can be used with the serial interface to read the main memory array sequentially
without a dummy byte up to maximum frequencies specified by f
CAR2
. To perform a continuous
read array with the page size set to 264 bytes, the CS must first be asserted then an opcode,
03H, must be clocked into the device followed by three address bytes (which comprise the 24-bit
page and byte address sequence). The first 12 bits (PA11 - PA0) of the 21-bit address sequence
specify which page of the main memory array to read, and the last 9 bits (BA8 - BA0) of the
21-bit address sequence specify the starting byte address within the page. To perform a contin-
uous read with the page size set to 256 bytes, the opcode, 03H, must be clocked into the device
followed by three address bytes (A19 - A0). Following the address bytes, additional clock pulses
on the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the read-
ing of data.
W
hen the end of a page in the main memory is reached during a Continuous Array
Read, the device will continue reading at the beginning of the next page with no delays incurred
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB081D-MU-2.5 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-SSU | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-SSU-2.5 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-SU | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D-SU-2.5 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081D-MU SL383 | 制造商:Adesto Technologies Corporation 功能描述:DATAFLASH, 8MB, SERIAL, 2.7V - 2.5V, MLF, IND TEMP, GREEN PK - Tape and Reel |
| AT45DB081D-MU-2.5 | 功能描述:闪存 8MB SERIAL 2.5V - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081D-MU-2.5-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-VDFN (5X6), IND TEMP, 2.5V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 50MHZ 8VDFN |
| AT45DB081D-MU-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-VDFN (5X6), IND TEMP, 2.7V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 66MHZ 8VDFN |
| AT45DB081D-MU-SL954 | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 66MHZ 8VDFN 制造商:Atmel 功能描述:Flash Serial-SPI 3V/3.3V 8Mbit 6ns 8-Pin MLF EP T/R |
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