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参数资料
| 型号： | AT45DB081D-SU |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| 中文描述： | 8M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.208 INCH, GREEN, PLASTIC, EIAJ, SOIC-8 |
| 文件页数： | 17/53页 |
| 文件大小： | 1105K |
| 代理商： | AT45DB081D-SU |
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17
3596E–DFLASH–02/07
AT45DB081D
9.1.3
Read Sector Protection Register Command
To read the Sector Protection Register, the CS pin must first be asserted. Once the CS pin has
been asserted, an opcode of 32H and 3 dummy bytes must be clocked in via the SI pin. After the
last bit of the opcode and dummy bytes have been clocked in, any additional clock pulses on the
SCK pins will result in data for the content of the Sector Protection Register being output on the
SO pin. The first byte corresponds to sector 0 (0a, 0b), the second byte corresponds to sector 1
and the last byte (byte 16) corresponds to sector 15. Once the last byte of the Sector Protection
Register has been clocked out, any additional clock pulses will result in undefined data being
output on the SO pin. The CS must be deasserted to terminate the Read Sector Protection Reg-
ister operation and put the output into a high-impedance state.
Note:
xx = Dummy Byte
Figure 9-4.
Read Sector Protection Register
9.1.4
Various Aspects About the Sector Protection Register
The Sector Protection Register is subject to a limit of 10,000 erase/program cycles. Users are
encouraged to carefully evaluate the number of times the Sector Protection Register will be
modified during the course of the applications’ life cycle. If the application requires that the Sec-
tor Protection Register be modified more than the specified limit of 10,000 cycles because the
application needs to temporarily unprotect individual sectors (sector protection remains enabled
while the Sector Protection Register is reprogrammed), then the application will need to limit this
practice. Instead, a combination of temporarily unprotecting individual sectors along with dis-
abling sector protection completely will need to be implemented by the application to ensure that
the limit of 10,000 cycles is not exceeded.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Read Sector Protection Register
32H
xxH
xxH
xxH
Opcode
X
X
X
Data Byte
n
Data Byte
n + 1
CS
Data Byte
n + 15
SI
SO
Each transition
represents
8
b
its
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB081D-SU-2.5 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081 | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-RC | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-RI | 8-Megabit 2.7-volt Only Serial DataFlash |
| AT45DB081-TC | 8-Megabit 2.7-volt Only Serial DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081D-SU SL383 | 制造商:Adesto Technologies 功能描述:Res Thin Film NET 60K Ohm/120K Ohm 0.5% 1/8W ±100ppm/°C SER Molded 6-Pin 0303 SMD 制造商:Adesto Technologies Corporation 功能描述:DATAFLASH, 8M, SERIAL, 2.7V - IND TEMP, GREEN 8 LEAD SOIC - Tape and Reel |
| AT45DB081D-SU SL955-AD | 功能描述:DATA FLASH 制造商:adesto technologies 系列:- 包装:剪切带（CT） 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:8Mb （256 字节 x 4096 页） 时钟频率:66MHz 写周期时间 - 字，页:4ms 存储器接口:SPI 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SOIC 标准包装:1 |
| AT45DB081D-SU-2.5 | 功能描述:闪存 8MB SERIAL 2.5V - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081D-SU-2.5-AD | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC |
| AT45DB081D-SU-2.5-SL383 | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, IND TEMP, 2.5V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 8MBIT 50MHZ 8SOIC |
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