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参数资料
| 型号： | AT45DB161-TI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 16-Megabit 2.7-volt Only Serial DataFlash |
| 中文描述： | 16M X 1 FLASH 2.7V PROM, PDSO28 |
| 封装： | PLASTIC, TSOP1-28 |
| 文件页数： | 2/20页 |
| 文件大小： | 224K |
| 代理商： | AT45DB161-TI |
AT45DB161
2
ries that are accessed randomly with multiple address lines
and a parallel interface, the DataFlash uses a serial inter-
face to sequentially access its data. The simple serial inter-
face facilitates hardware layout, increases system
reliability, minimizes switching noise, and reduces package
size and active pin count. The device is optimized for use in
many commercial and industrial applications where high
density, low pin count, low voltage, and low power are
essential. Typical applications for the DataFlash are digital
voice storage, image storage, and data storage. The
device operates at clock frequencies up to 13 MHz with a
typical active read current consumption of 4 mA.
To allow for simple in-system reprogrammability, the
AT45DB161 does not require high input voltages for pro-
gramming. The device operates from a single power sup-
ply, 2.7V to 3.6V, for both the program and read
operations. The AT45DB161 is enabled through the chip
select pin (CS) and accessed via a three-wire interface
consisting of the Serial Input (SI), Serial Output (SO), and
the Serial Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the
AT45DB161 is divided into three levels of granularity com-
prising of sectors, blocks, and pages. The Memory Archi-
tecture Diagram illustrates the breakdown of each level and
details the number of pages per sector and block. All pro-
gram operations to the DataFlash occur on a page by page
basis; however, the optional erase operations can be per-
formed at the block or page level.
FLASH MEMORY ARRAY
PAGE (528 BYTES)
BUFFER 2 (528 BYTES)
BUFFER 1 (528 BYTES)
I/O INTERFACE
SCK
CS
RESET
V
CC
GND
RDY/BUSY
WP
SO
SI
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB161B | 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
| AT45DB161B-CNC-2.5 | 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
| AT45DB161B-CC | 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
| AT45DB161B-CC-2.5 | 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
| AT45DB161B-CI | 16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB321 | 制造商:Adesto Technologies Corporation 功能描述:ROOT PART: DATAFLASH - Bulk |
| AT45DB321B | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:32-megabit 2.7-volt Only DataFlash |
| AT45DB321B-CC | 功能描述:IC FLASH 32MBIT 20MHZ 44CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT45DB321B-CI | 功能描述:IC FLASH 32MBIT 20MHZ 44CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT45DB321B-RC | 功能描述:闪存 32M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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