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参数资料
| 型号： | AT45DB161B-RI-2.5 |
| 厂商： | Atmel |
| 文件页数： | 2/33页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 16MBIT 20MHZ 28SOIC |
| 标准包装： | 26 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | DataFLASH |
| 存储容量： | 16M（4096 页 x 528 字节） |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.5 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-SOIC（0.342"，8.69mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 管件 |
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applications. Its 17,301,504 bits of memory are organized as 4096 pages of 528 bytes
each. In addition to the main memory, the AT45DB161B also contains two SRAM
data buffers of 528 bytes each. The buffers allow receiving of data while a page in the
main memory is being reprogrammed, as well as writing a continuous data stream.
EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three
step Read-Modify-Write operation.Unlike conventional Flash memories that are
accessed randomly with multiple address lines and a parallel interface, the DataFlash
uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode
0 and mode 3. The simple serial interface facilitates hardware layout, increases system
reliability, minimizes switching noise, and reduces package size and active pin count.
The device is optimized for use in many commercial and industrial applications where
high density, low pin count, low voltage, and low power are essential. The device oper-
ates at clock frequencies up to 20 MHz with a typical active read current consumption of
4 mA.
To allow for simple in-system reprogrammability, the AT45DB161B does not require
high input voltages for programming. The device operates from a single power supply,
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The
AT45DB161B is enabled through the chip select pin (CS) and accessed via a three-wire
interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock
(SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
Block Diagram
WP
PAGE (528 BYTES)
FLASH MEMORY ARRAY
SCK
CS
RESET
VCC
GND
BUFFER 1 (528 BYTES)
I/O INTERFACE
BUFFER 2 (528 BYTES)
RDY/BUSY
SI
SO
Memory Array
To provide optimal flexibility, the memory array of the AT45DB161B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
2
AT45DB161B
2224I–DFLSH–10/04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB161B-RU | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
| AT45DB161B-TC | 功能描述:闪存 16M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB161B-TC-2.5 | 功能描述:IC FLASH 16MBIT 20MHZ 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT45DB161B-TI | 功能描述:闪存 16M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB161B-TI-2.5 | 功能描述:IC FLASH 16MBIT 20MHZ 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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