参数资料
| 型号： | AT45DB321B-CC |
| 厂商： | Atmel |
| 文件页数： | 2/32页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 32MBIT 20MHZ 44CBGA |
| 标准包装： | 280 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | DataFLASH |
| 存储容量： | 32M（8192 页 x 528 字节） |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-CBGA |
| 供应商设备封装： | 44-CBGA（6x12） |
| 包装： | 托盘 |
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stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-
tained three step Read-Modify-Write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a SPI serial interface to sequentially access its data. DataFlash sup-
ports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout,
increases system reliability, minimizes switching noise, and reduces package size and
active pin count. The device is optimized for use in many commercial and industrial
applications where high density, low pin count, low voltage, and low power are essential.
The device operates at clock frequencies up to 20 MHz with a typical active read current
consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB321B does not require
high input voltages for programming. The device operates from a single power supply,
2.7V to 3.6V, for both the program and read operations. The AT45DB321B is enabled
through the chip select pin (CS) and accessed via a three-wire interface consisting of
the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
Block Diagram
WP
PAGE (528 BYTES)
FLASH MEMORY ARRAY
SCK
CS
RESET
VCC
GND
BUFFER 1 (528 BYTES)
I/O INTERFACE
BUFFER 2 (528 BYTES)
RDY/BUSY
SI
SO
Memory Array
To provide optimal flexibility, the memory array of the AT45DB321B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
2
AT45DB321B
2223E–DFLASH–11//03
相关PDF资料 |
PDF描述 |
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| AT45DB161B-RI | IC FLASH 16MBIT 20MHZ 28SOIC |
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| AT45DB161B-RC | IC FLASH 16MBIT 20MHZ 28SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB321B-CI | 功能描述:IC FLASH 32MBIT 20MHZ 44CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT45DB321B-RC | 功能描述:闪存 32M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB321B-RI | 功能描述:IC FLASH 32MBIT 20MHZ 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT45DB321B-TC | 功能描述:闪存 32M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB321B-TI | 功能描述:IC FLASH 32MBIT 20MHZ 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
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