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参数资料
| 型号： | AT49BV002-90TI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| 中文描述： | 256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 |
| 封装： | 8 X 20 MM, PLASTIC, TSOP1-32 |
| 文件页数： | 4/20页 |
| 文件大小： | 171K |
| 代理商： | AT49BV002-90TI |
AT49BV/LV002(N)(T)
4
address range of the boot block is 3C000 to 3FFFF for the
AT49BV/LV002(N)T.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed with input voltage of
5.5V or less. Data in the main memory block can still be
changed through the regular programming method. To acti-
vate the lockout feature, a series of six program commands
to specific addresses with specific data must be performed.
Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION:
A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out for the AT49BV/LV002(N), and a read from
address location 3C002H will show if programming the
bootblock is locked out for AT49BV/LV002(N)T. If the data
on I/O0 is low, the boot block can be programmed; if the
data on I/O0 is high, the program lockout feature has been
activated and the block cannot be programmed. The soft-
ware product identification code should be used to return to
standard operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:
The user can override the boot block programming lockout
by taking the RESET pin to 12 volts during the entire chip
erase, sector erase or byte programming operation. When
the RESET pin is brought back to TTL levels the boot block
programming lockout feature is again active. This feature is
not available on the AT49BV/LV002N(T).
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING:
The AT49BV/LV002(N)(T) features
DATA polling to indicate the end of a program cycle. During
a program cycle an attempted read of the last byte loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. DATA
polling may begin at any time during the program cycle.
TOGGLE BIT:
In addition to DATA polling the
AT49BV/LV002(N)(T) provides another method for deter-
mining the end of a program or erase cycle. During a pro-
gram or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and
zero. Once the program cycle has completed, I/O6 will stop
toggling and valid data will be read. Examining the toggle
bit may begin at any time during a program cycle.
HARDWARE DATA PROTECTION:
Hardware features
protect against inadvertent programs to the
AT49BV/LV002(N)(T) in the following ways: (a) V
CC
sense:
if V
CC
is below 1.8V (typical), the program function is inhib-
ited. (b) Program inhibit: holding any one of OE low, CE
high or WE high inhibits program cycles. (c) Noise filter:
pulses of less than 15 ns (typical) on the WE or CE inputs
will not initiate a program cycle.
相关PDF资料 |
PDF描述 |
|---|---|
| AT49BV002-90VC | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| AT49BV002ANT | LM4132 SOT-23 Precision Low Dropout Voltage Reference; Package: SOT-23; No of Pins: 5 |
| AT49BV002AT | 2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV002N-12TC | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| AT49BV002N-12TI | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV002-90VC | 功能描述:IC FLASH 2MBIT 90NS 32VSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49BV002-90VI | 功能描述:IC FLASH 2MBIT 90NS 32VSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49BV002A | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV002A(N)(T) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash |
| AT49BV002A-70JI | 功能描述:IC FLASH 2MBIT 70NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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