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| 型号： | AT49BV080 |
| 厂商： | Atmel Corp. |
| 英文描述： | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| 中文描述： | 8兆位单2.7伏电池电压快闪记忆体（800万位单电源为2.7V电池电压技术闪速存储器） |
| 文件页数： | 1/16页 |
| 文件大小： | 173K |
| 代理商： | AT49BV080 |
1
Features
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 120 ns
Internal Program Control and Timer
16K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 30 μs/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 μA CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
– 8 x 14 mm CBGA
Description
The AT49BV/LV080(T) are 3-volt-only in-system Flash Memory devices. Their 8
megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to
120 ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 50
μ
A.
8-Megabit
(1M x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV080
AT49BV080T
AT49LV080
AT49LV080T
Rev. 0812B–10/98
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O7
Data Inputs/Outputs
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A19
A18
A17
A16
A15
A14
A13
A12
CE
VCC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
WE
OE
RDY/BUSY
I/O7
I/O6
I/O5
I/O4
VCC
GND
GND
I/O3
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
CBGA
Top View
A
B
C
D
E
F
1
2
3
4
5
6
7
A5
A4
A6
A3
A2
A1
A8
A7
A9
I/O1
A0
I/O0
A11
A10
RST
NC
I/O3
I/O2
NC
VCC
CE
VCC
GND
GND
A12
A13
A14
I/O4
I/O6
I/O5
A15
NC
A16
I/O7
OE
RY/BY
A17
A18
A19
NC
NC
WE
SOIC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
A3
A2
A1
A0
I/O0
I/O1
I/O2
I/O3
GND
GND
VCC
CE
A12
A13
A14
A15
A16
A17
A18
A19
NC
NC
NC
NC
WE
OE
RDY/BUSY
I/O7
I/O6
I/O5
I/O4
VCC
相关PDF资料 |
PDF描述 |
|---|---|
| AT49LV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49LV080T | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49BV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| AT49LV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| AT49LV1024A-45VC | 1-megabit (64K x 16) 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV080-12CC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080-12CI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080-12RC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080-12RI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080-12TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
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