参数资料
型号: AT49BV4096-15RI
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
中文描述: 256K X 16 FLASH 5V PROM, 150 ns, PDSO44
封装: 0.525 INCH, PLASTIC, SOIC-44
文件页数: 4/11页
文件大小: 176K
代理商: AT49BV4096-15RI
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
Command Definition (in Hex)
(1)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
Addr
Addr
5555
2nd Bus
Cycle
Addr
3rd Bus
Cycle
Addr
4th Bus
Cycle
Addr
5th Bus
Cycle
Addr
6th Bus
Cycle
Addr
Data
D
OUT
AA
Data
Data
Data
Data
Data
Read
Chip Erase
Sector
Erase
Word
Program
Boot Block
Lockout
(2)
Product ID
Entry
Product ID
Exit
(3)
Product ID
Exit
(3)
1
6
2AAA
55
5555
80
5555
AA
2AAA
55
5555
10
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
SA
(4, 5)
30
4
5555
AA
2AAA
55
5555
A0
Addr
D
IN
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
40
3
5555
AA
2AAA
55
5555
90
3
5555
AA
2AAA
55
5555
F0
1
xxxx
F0
Notes: 1. The DATA FORMAT in each bus cycle is as follows:
I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
2. The 8K word boot sector has the address range
00000H to 01FFFH.
3. Either one of the Product ID Exit commands
can be used.
4. SA = sector addresses:
SA = 03XXX for PARAMETER BLOCK 1
SA = 05XXX for PARAMETER BLOCK 2
SA = 1FXXX for MAIN MEMORY ARRAY
5. When the boot block programming lockout feature is not
enabled, the boot block and the main memory block will erase
sense: if V
CC
is below 1.8V (typical), the program function
is inhibited. (b) V
CC
power on delay: once V
CC
has
reached the V
CC
sense level, the device will automat-
ically time out 10 ms (typical) before programming. (c)
Program inhibit: holding any one of OE low, CE high or
WE high inhibits program cycles. (d) Noise filter: pulses of
less than 15 ns (typical) on the WE or CE inputs will not
initiate a program cycle.
INPUT LEVELS:
While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE, and WE) may be driven from 0 to 5.5V without ad-
versely affecting the operation of the device. The I/O lines
can only be driven from 0 to V
CC
+ 0.6V.
4
AT49BV/LV4096
相关PDF资料
PDF描述
AT49BV4096-15TC 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15TI 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
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相关代理商/技术参数
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AT49BV4096-15TC 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15TI 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-20RC 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-20RI 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-20TC 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-Megabit 256K x 16 3-volt Only CMOS Flash Memory