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参数资料
| 型号： | AT49F001N-70JI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 1-Megabit 128K x 8 5-volt Only Flash Memory |
| 中文描述： | 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 2/16页 |
| 文件大小： | 152K |
| 代理商： | AT49F001N-70JI |
AT49F001(N)(T)
2
When the device is deselected, the CMOS standby current
is less than 100
μ
A. For the AT49F001NT pin 1 for the DIP
and PLCC packages and pin 9 for the TSOP package are
don’t connect pins.
To allow for simple in-system reprogrammability, the
AT49F001(N)(T) does not require high input voltages for
programming. Five-volt-only commands determine the read
and programming operation of the device. Reading data
out of the device is similar to reading from an EPROM; it
has standard CE, OE, and WE inputs to avoid bus conten-
tion. Reprogramming the AT49F001(N)(T) is performed by
erasing a block of data and then programming on a byte by
byte basis. The byte programming time is a fast 50
μ
s. The
end of a program cycle can be optionally detected by the
DATA polling feature. Once the end of a byte program
cycle has been detected, a new access for a read or pro-
gram can begin. The typical number of program and erase
cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command
sequence; the device internally controls the erase opera-
tions. There are two 8K byte parameter block sections and
two main memory blocks.
The device has the capability to protect the data in the boot
block; this feature is enabled by a command sequence.
The 16K-byte boot block section includes a reprogramming
lock out feature to provide data integrity. The boot sector is
designed to contain user secure code, and when the fea-
ture is enabled, the boot sector is protected from being
reprogrammed.
In the AT49F001N(T), once the boot block programming
lockout feature is enabled, the contents of the boot block
are permanent and cannot be changed. In the
AT49F001(T), once the boot block programming lockout
feature is enabled, the contents of the boot block cannot be
changed with input voltage levels of 5.5 volts or less.
Block Diagram
CONTROL
LOGIC
Y DECODER
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
OE
WE
CE
RESET
ADDRESS
INPUTS
V
CC
GND
AT49F001(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
X DECODER
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
1FFFF
1C000
1BFFF
1A000
19FFF
18000
17FFF
10000
0FFFF
00000
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
AT49F001(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
1FFFF
10000
0FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
相关PDF资料 |
PDF描述 |
|---|---|
| AT49F001N-70PC | 1-Megabit 128K x 8 5-volt Only Flash Memory |
| AT49F001N-70PI | 1-Megabit 128K x 8 5-volt Only Flash Memory |
| AT49F001N-70TC | LM4675? Ultra-Low EMI, Filterless, 2.65W, Mono, Class D Audio Power Amplifier with Spread Spectrum; Package: MICRO SMD; No of Pins: 9 |
| AT49F001N-70TI | 1-Megabit 128K x 8 5-volt Only Flash Memory |
| AT49F001N-70VC | 1-Megabit 128K x 8 5-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49F001N-70PC | 功能描述:闪存 128kx8 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49F001N-70PI | 功能描述:IC FLASH 1MBIT 70NS 32DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49F001N-70TC | 功能描述:IC FLASH 1MBIT 70NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49F001N-70TI | 功能描述:IC FLASH 1MBIT 70NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49F001N-70VC | 功能描述:IC FLASH 1MBIT 70NS 32VSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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