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参数资料
| 型号： | AT49F002AN |
| 厂商： | Atmel Corp. |
| 英文描述： | 2-megabit (256K x 8) 5-volt Only Flash Memory |
| 中文描述： | 2兆位（256K × 8）5伏只有闪存 |
| 文件页数： | 3/20页 |
| 文件大小： | 213K |
| 代理商： | AT49F002AN |
3
3354F–FLASH–2/05
AT49F002A(N)(T)
3.
Block Diagram
4.
Device Operation
4.1
Read
The AT49F002A(N)(T) is accessed like an EPROM. When CE and OE are low and WE is high,
the data stored at the memory location determined by the address pins is asserted on the out-
puts. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention.
4.2
Command Sequences
When the device is first powered on, it will be reset to the read or standby mode depending upon
the state of the control line inputs. In order to perform other device functions, a series of com-
mand sequences are entered into the device. The command sequences are shown in the
Command Definitions table. The command sequences are written by applying a low pulse on the
WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the
falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of
CE or WE. Standard microprocessor write timings are used. The address locations used in the
command sequences are not affected by entering the command sequences.
CONTROL
LOGIC
Y DECODER
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
OE
WE
CE
RESET
ADDRESS
INPUTS
VCC
GND
AT49F002A(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
X DECODER
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
MAIN MEMORY
BLOCK 3
(64K BYTES)
MAIN MEMORY
BLOCK 4
(64K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
1FFFF
10000
0FFFF
08000
07FFF
3FFFF
30000
2FFFF
20000
06000
05FFF
04000
03FFF
00000
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
AT49F002A(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
3FFFF
3C000
3BFFF
3A000
39FFF
38000
37FFF
30000
2FFFF
20000
MAIN MEMORY
BLOCK 3
(64K BYTES)
MAIN MEMORY
BLOCK 4
(64K BYTES)
10000
0FFFF
00000
相关PDF资料 |
PDF描述 |
|---|---|
| AT49F002AN-55JI | 2-megabit (256K x 8) 5-volt Only Flash Memory |
| AT49F002AN-55JU | 2-megabit (256K x 8) 5-volt Only Flash Memory |
| AT49F002AN-55TI | 2-megabit (256K x 8) 5-volt Only Flash Memory |
| AT49F002AN-55TU | 2-megabit (256K x 8) 5-volt Only Flash Memory |
| AT49F002AN-55VI | 2-megabit (256K x 8) 5-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49F002AN-55JC | 制造商:Atmel Corporation 功能描述:FLASH PARALLEL 5V 2MBIT 256KX8 55NS 32PLCC - Rail/Tube |
| AT49F002AN-55JI | 功能描述:IC FLASH 2MBIT 55NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT49F002AN-55JI-SL383 | 制造商:Atmel Corporation 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8 55ns 32-Pin PLCC |
| AT49F002AN-55JU | 功能描述:IC FLASH 2MBIT 55NS 32PLCC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49F002AN-55PI | 功能描述:IC FLASH 2MBIT 55NS 32DIP 制造商:microchip technology 系列:- 包装:管件 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:2Mb （256K x 8） 写周期时间 - 字，页:50μs 访问时间:55ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:通孔 封装/外壳:32-DIP（0.600"，15.24mm） 供应商器件封装:32-DIP 基本零件编号:AT49F002 标准包装:12 |
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