- 您现在的位置：买卖IC网 > PDF目录381460 > AT49HLV010-90JC (ATMEL CORP) 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory PDF资料下载
参数资料
| 型号： | AT49HLV010-90JC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 128K X 8 FLASH 3V PROM, 90 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 2/11页 |
| 文件大小： | 88K |
| 代理商： | AT49HLV010-90JC |
AT49(H)BV/(H)LV010
2
The optional 8K bytes boot block section includes a repro-
gramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
Block Diagram
and when the feature is enabled, the boot sector is perma-
nently protected from being reprogrammed.
Device Operation
READ:
The AT49(H)BV/(H)LV010 is accessed like an
EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the
address pins is asserted on the outputs. The outputs are
put in the high impedance state whenever CE or OE is
high. This dual-line control gives designers flexibility in pre-
venting bus contention.
ERASURE:
Before a byte can be reprogrammed, the 128K
bytes memory array (or 120K bytes if the boot block fea-
tured is used) must be erased. The erased state of the
memory bits is a logical “1”. The entire device can be
erased at one time by using a 6-byte software code. The
software chip erase code consists of 6-byte load com-
mands to specific address locations with a specific data
pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is t
EC
. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING:
Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can con-
vert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle oper-
ation (please refer to the Command Definitions table). The
device will automatically generate the required internal pro-
gram pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified t
BP
cycle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT:
The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular pro-
gramming method. To activate the lockout feature, a series
of six program commands to specific addresses with spe-
cific data must be performed. Please refer to the Com-
mand Definitions table.
BOOT BLOCK LOCKOUT DETECTION:
A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-
out feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
DATA INPUTS/OUTPUTS
I/O0 - I/O7
DATA LATCH
INPUT/OUTPUT
BUFFERS
Y-GATING
MAIN MEMORY
(120K BYTES)
OPTIONAL BOOT
BLOCK (8K BYTES)
OE, CE AND WE
LOGIC
Y DECODER
X DECODER
VCC
GND
OE
WE
CE
ADDRESS
INPUTS
01FFF
00000
相关PDF资料 |
PDF描述 |
|---|---|
| AT49HLV010-90JI | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49HLV010-90TC | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49HLV010-90TI | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV010-12JC | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV010-12JI | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49LD3200-10TC | 功能描述:IC FLASH 16MBIT 100MHZ 86TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT49LD3200-10TI | 功能描述:IC FLASH 16MBIT 100MHZ 86TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT49LD3200-13TC | 功能描述:闪存 32M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LD3200-13TI | 功能描述:闪存 32M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LD3200-20TC | 功能描述:IC FLASH 32MBIT 50MHZ 86TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
发布紧急采购，3分钟左右您将得到回复。