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参数资料
| 型号： | AT49LV002NT-90PC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| 中文描述： | 256K X 8 FLASH 3V PROM, 90 ns, PDIP32 |
| 封装： | 0.600 INCH, PLASTIC, DIP-32 |
| 文件页数： | 2/20页 |
| 文件大小： | 171K |
| 代理商： | AT49LV002NT-90PC |
AT49BV/LV002(N)(T)
2
AT49BV/LV002N(T) pin 1 for the DIP and PLCC packages
and pin 9 for the TSOP package are don’t connect pins.
To allow for simple in-system reprogrammability, the
AT49BV/LV002(N)(T) does not require high input voltages
for programming. Five-volt-only commands determine the
read and programming operation of the device. Reading
data out of the device is similar to reading from an EPROM;
it has standard CE, OE, and WE inputs to avoid bus con-
tention. Reprogramming the AT49BV/LV002(N)(T) is per-
formed by erasing a block of data and then programming
on a byte by byte basis. The byte programming time is a
fast 50
μ
s. The end of a program cycle can be optionally
detected by the DATA polling feature. Once the end of a
byte program cycle has been detected, a new access for a
read or program can begin. The typical number of program
and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command
sequence; the device internally controls the erase opera-
tions. There are two 8K byte parameter block sections and
two main memory blocks.
The device has the capability to protect the data in the boot
block; this feature is enabled by a command sequence.
The 16K-byte boot block section includes a reprogramming
lock out feature to provide data integrity. The boot sector is
designed to contain user secure code, and when the fea-
ture is enabled, the boot sector is protected from being
reprogrammed.
In the AT49BV/LV002N(T), once the boot block program-
ming lockout feature is enabled, the contents of the boot
block are permanent and cannot be changed. In the
AT49BV/LV002(T), once the boot block programming lock-
out feature is enabled, the contents of the boot block can-
not be changed with input voltage levels of 5.5 volts or less.
Block Diagram
CONTROL
LOGIC
Y DECODER
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
OE
WE
CE
RESET
ADDRESS
INPUTS
V
CC
GND
AT49BV/LV002(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
X DECODER
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(96K BYTES)
MAIN MEMORY
BLOCK 2
(128K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
3FFFF
20000
1FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
AT49BV/LV002(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(96K BYTES)
MAIN MEMORY
BLOCK 2
(128K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
3FFFF
3C000
3BFFF
3A000
39FFF
38000
37FFF
20000
1FFFF
00000
相关PDF资料 |
PDF描述 |
|---|---|
| AT49LV002NT-90PI | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
| AT49LV002NT-90TC | LM4893 Boomer ® Audio Power Amplifier Series 1.1 Watt Audio Power Amplifier; Package: MICRO SMD; No of Pins: 9 |
| AT49LV002NT-90TI | LM4893 Boomer ® Audio Power Amplifier Series 1.1 Watt Audio Power Amplifier; Package: MICRO SMD; No of Pins: 9 |
| AT49LV002NT-90VC | LM4893 Boomer ® Audio Power Amplifier Series 1.1 Watt Audio Power Amplifier; Package: SOIC NARROW; No of Pins: 8 |
| AT49LV002NT-90VI | 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49LV002NT-90PI | 功能描述:IC FLASH 2MBIT 90NS 32DIP 制造商:microchip technology 系列:- 包装:管件 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:2Mb （256K x 8） 写周期时间 - 字，页:50μs 访问时间:90ns 存储器接口:并联 电压 - 电源:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:通孔 封装/外壳:32-DIP（0.600"，15.24mm） 供应商器件封装:32-DIP 基本零件编号:AT49LV002 标准包装:12 |
| AT49LV002NT-90TC | 功能描述:IC FLASH 2MBIT 90NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49LV002NT-90TI | 功能描述:IC FLASH 2MBIT 90NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49LV002T-12JC | 功能描述:IC FLASH 2MBIT 120NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49LV002T-12JI | 功能描述:IC FLASH 2MBIT 120NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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