参数资料
型号: AT49SN12804-70CI
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory
中文描述: 8M X 16 FLASH 1.8V PROM, 70 ns, CBGA56
封装: 8 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, CERAMIC, BGA-56
文件页数: 9/41页
文件大小: 397K
代理商: AT49SN12804-70CI
9
AT49SN/SV12804 [Preliminary]
3314A–FLASH–4/04
READ STATUS REGISTER IN THE BURST MODE:
The waveform below shows a status
register read during a program operation. The two-bus cycle command for a program opera-
tion is given followed by a read status register command. Following the read status register
command, the AVD signal is pulsed low to latch the valid address at point A. With the OE sig-
nal pulsed low and for the specified clock latency of three, the status register output is valid
within 13 ns from clock edge B. The same status register data is output on successive clock
edges. To update the status register output, the AVD signal needs to be pulsed low and the
next data is available after a clock latency of three. The status register output is also available
after the chosen clock latency during an erase operation.
Figure 3.
Read Status Register in the Burst Mode
Note:
1. The WAIT signal is for a burst configuration setting of B10 and B8 = 0.
XX
40H/10H
DATA
70H
00H
80H
ADDRESS
CE
A0 - A22
I/O0 - I/O15
AVD
CLK
OE
WE
WAIT
(1)
B
A
相关PDF资料
PDF描述
AT49SV12804 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory
AT49SV12804-70TI 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory
AT49SN6416-70CI 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
AT49SN6416T 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
AT49SN6416T-70CI 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
相关代理商/技术参数
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