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参数资料
| 型号： | AT49SN12804 |
| 厂商： | Atmel Corp. |
| 英文描述： | 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| 中文描述： | 128兆位（8米× 16）突发/页模式1.8伏的快闪记忆体 |
| 文件页数： | 5/41页 |
| 文件大小： | 397K |
| 代理商： | AT49SN12804 |
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5
AT49SN/SV12804 [Preliminary]
3314A–FLASH–4/04
FIXED-LENGTH BURST READS:
During a fixed-length burst mode read, four, eight or six-
teen words of data may be burst from the device, depending upon the configuration. The
device supports a linear burst mode. The burst sequence is shown on page 21. When operat-
ing in the linear burst read mode (B7 = 1) with the burst wrap bit (B3 = 1) set, the device may
incur an output delay when the burst sequence crosses the first 16-word boundary in the
memory. If the starting is D0 - D12, there is no delay. If the starting address is D13 - D15, an
output delay equal to the initial clock latency is incurred. The delay takes place only once, and
only if the burst sequence crosses a 16-word boundary. To indicate that the device is not
ready to continue the burst, the device will drive the WAIT pin low (B10 and B8 = 0) during the
clock cycles in which new data is not being presented. Once the WAIT pin is driven high (B10
and B8 = 0), the current data will be valid. The WAIT signal will be tri-stated when the CE or
OE signal is high.
The “Four-word Burst Read Waveform” on page 32 illustrates a fixed-length burst cycle. The
valid address is latched at point A. For the specified clock latency of four, data D0 is valid
within 13 ns of clock edge B. The low-to-high transition of the clock at point C results in D1
being read. Similarly, D2 and D3 are output following the next two clock cycles. Returning CE
high ends the read cycle. There is no output delay in the burst access wrap mode (B3 = 0).
BURST SUSPEND:
The Burst Suspend feature allows the system to temporarily suspend a
synchronous burst operation if the system needs to use the Flash address and data bus for
other purposes. Burst accesses can be suspended during the initial latency (before data is
received) or after the device has output data. When a burst access is suspended, internal
array sensing continues and any previously latched internal data is retained.
Burst Suspend occurs when CE is asserted, the current address has been latched (either ris-
ing edge of AVD or valid CLK edge), CLK is halted, and OE is deasserted. The CLK can be
halted when it is at V
IH
or V
IL
. To resume the burst access, OE is reasserted and the CLK is
restarted. Subsequent CLK edges resume the burst sequence where it left off.
Within the device, OE gates the WAIT signal. Therefore, during Burst Suspend the WAIT sig-
nal reverts to a high-impedance state when OE is deasserted. See “Burst Suspend Waveform”
on page 32.
RESET:
A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET pin
halts the present device operation and puts the outputs of the device in a high-impedance
state. When a high level is reasserted on the RESET pin, the device returns to read mode.
ERASE:
Before a word can be reprogrammed it must be erased. The erased state of the
memory bits is a logical “1”. The entire memory can be erased by using the Chip Erase com-
mand or individual planes can be erased by using the Plane Erase command or individual
sectors can be erased by using the Sector Erase command.
相关PDF资料 |
PDF描述 |
|---|---|
| AT49SN12804-70CI | 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SV12804 | 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SV12804-70TI | 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416-70CI | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416T | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49SV163D-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163D-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV322A-80CU | 制造商:Atmel Corporation 功能描述:Flash Parallel 1.8V 32Mbit 4M/2M x 8bit/16bit 80ns 48-Pin CBGA |
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