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参数资料
| 型号： | AT60142E-DD15SMV |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 15 ns, UUC |
| 封装： | DIE |
| 文件页数： | 10/17页 |
| 文件大小： | 295K |
| 代理商： | AT60142E-DD15SMV |
10
AT60142E/ET
4156F–AERO–06/04
Figure 3.
Write Cycle 1. WE Controlled, OE High During Write
Figure 4.
Write Cycle 2. WE Controlled, OE Low
Figure 5.
Write Cycle 3. CS Controlled
(1)
Note:
The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate
a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be refer-
enced to the active edge of the signal that terminates the write.
Data out is high impedance if OE= V
IH
.
E
E
E
相关PDF资料 |
PDF描述 |
|---|---|
| AT60142E-DD20M-E | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142E-DD20MMQ | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142E-DD20SMV | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142ET | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142ET-DC17M | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT60142E-DD20M-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142E-DD20MMQ | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142E-DD20SMV | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142ET | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| AT60142ET-DC17M | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad Hard 512K x 8 Very Low Power CMOS SRAM |
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