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| 型号： | AT89C51-12QI |
| 厂商： | ATMEL CORP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-Bit Microcontroller with 4K Bytes Flash |
| 中文描述： | 8-BIT, FLASH, 12 MHz, MICROCONTROLLER, PQFP44 |
| 封装： | PLASTIC, MS-022AB, QFP-44 |
| 文件页数： | 12/24页 |
| 文件大小： | 1379K |
| 代理商： | AT89C51-12QI |
AT89C51RD2 / AT89C51ED2 QualPack
12 Rev. 0 – 2003 July
4.3.3 Time Dependent Dielectric Breakdown
Purpose:
To evaluate the AT56800 thin gate oxide TDDB performance as follows:
a) To determine the activation energy of gate oxide failures on STI active edge capacitors
b) To determine the field acceleration factor for intrinsic gate oxide failures
c) To determine the sigma the lognormal standard deviation of the time to breakdown distribution of the
intrinsic gate oxide
Test Parameters:
Lot
9G3470 (wafers 4, 5, 18)
Min thickness:
72.9A
Max thickness:
74.7A
Capacitor size:
6.267 um
2
The stress conditions used are shown below:
Temperature/Field
9.5MV/cm
10.0MV/cm
225C
N=5
N=5
200C
N=5
N=5
175C
N=5
N=5
Accumulated total stress time: 132 hours / 46 capacitors
Calculation Parameters:
Failure Criteria:
0.01% failures
Temp/Voltage use:
105°C / 3.3V
Oxide thickness:
63A (target –10%)
Lifetime Prediction:
The equation used to describe the breakdown of gate oxides is:
Tbd(i) = exp(SIGMA*Z(i) + GAMMA*Eox +Ea/kT + T0)
Where
Tbd(i) is the time to breakdown of the i
th
capacitor,
SIGMA is the lognormal standard deviation of the breakdown distribution,
Z(i) is the Z-score of the i
th
capacitor (essentially the difference between its breakdown time and the mean
measured in standard deviations),
GAMMA is the Field acceleration constant,
Eox is the oxide field,
Ea is the activation energy of this failure mechanism,
K is Boltzmann’s constant,
T is the Kelvin Temperature, and
T0 is a fitting constant.
10.5MV/cm
N=5
N=5
N=6
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