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参数资料
| 型号： | AT93C46-10TI-2.5 |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 3-Wire Serial EEPROMs |
| 中文描述： | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.170 INCH, TSSOP-8 |
| 文件页数： | 6/15页 |
| 文件大小： | 154K |
| 代理商： | AT93C46-10TI-2.5 |
AT93C46/56/57/66
6
Functional Description
The AT93C46/56/57/66 is accessed via a simple and ver-
satile 3-wire serial communication interface. Device opera-
tion is controlled by seven instructions issued by the host
processor.
A valid instruction starts with a rising edge
of CS
and consists of a Start Bit (logic ‘1’) followed by the
appropriate Op Code and the desired memory Address
location.
READ (READ):
The Read (READ) instruction contains
the Address code for the memory location to be read. After
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the ris-
ing edges of serial clock SK. It should be noted that a
dummy bit (logic ‘0’) precedes the 8- or 16-bit data output
string.
ERASE/WRITE (EWEN):
To assure data integrity, the
part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, program-
ming remains enabled until an Erase/Write Disable
(EWDS) instruction is executed or V
CC
power is removed
from the part.
ERASE (ERASE):
The Erase (ERASE) instruction pro-
grams all bits in the specified memory location to the logical
‘1’ state. The self-timed erase cycle starts once the ERASE
instruction and address are decoded. The DO pin outputs
the READY/BUSY status of the part if CS is brought high
after being kept low for a minimum of 250 ns (t
CS
). A logic
‘1’ at pin DO indicates that the selected memory location
has been erased, and the part is ready for another instruc-
tion.
WRITE (WRITE):
the 8 or 16 bits of data to be written into the specified mem-
ory location. The self-timed programming cycle, t
WP
, starts
after the last bit of data is received at serial data input pin
DI. The DO pin outputs the READY/BUSY status of the part
if CS is brought high after being kept low for a minimum of
250 ns (t
CS
). A logic ‘0’ at DO indicates that programming is
still in progress. A logic ‘1’ indicates that the memory loca-
tion at the specified address has been written with the data
pattern contained in the instruction and the part is ready for
further instructions.
A READY/BUSY status cannot be
obtained if the CS is brought high after the end of the
self-timed programming cycle, t
WP
.
ERASE ALL (ERAL):
The Erase All (ERAL) instruction
programs every bit in the memory array to the logic ‘1’ state
and is primarily used for testing purposes. The DO pin out-
puts the READY/BUSY status of the part if CS is brought
high after being kept low for a minimum of 250 ns (t
CS
). The
ERAL instruction is valid only at V
CC
= 5.0V
±
10%.
WRITE ALL (WRAL)
:
The Write All (WRAL) instruction
programs all memory locations with the data patterns spec-
ified in the instruction. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (t
CS
). The WRAL
instruction is valid only at V
CC
= 5.0V
±
10%.
ERASE/WRITE DISABLE (EWDS):
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all programming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.
The Write (WRITE) instruction contains
To protect against
Instruction Set for the AT93C56 and AT93C66
Instruction
SB
Op
Code
Address
Data
Comments
x 8
x 16
x 8
x 16
READ
1
10
A
8
- A
0
A
7
- A
0
Reads data stored in memory, at
specified address.
EWEN
1
00
11XXXXXXX
11XXXXXX
Write enable must precede all
programming modes.
ERASE
1
11
A
8
- A
0
A
7 -
A
0
Erases memory location A
n
- A
0
.
WRITE
1
01
A
8
- A
0
A
7
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
- A
0
.
ERAL
1
00
10XXXXXXX
10XXXXXX
Erases all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
WRAL
1
00
01XXXXXXX
01XXXXXX
D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid
when V
CC
= 5.0V
±
10% and Disable
Register cleared.
EWDS
1
00
00XXXXXXX
00XXXXXX
Disables all programming instructions.
相关PDF资料 |
PDF描述 |
|---|---|
| AT93C56-10PI-2.5 | 3-Wire Serial EEPROMs |
| AT93C56-10SI-2.5 | 3-Wire Serial EEPROMs |
| AT93C46 | 3-Wire Serial EEPROMs |
| AT93C46-10PC | 3-Wire Serial EEPROMs |
| AT93C46-10PC-1.8 | 3-wire Serial EEPROMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT93C46-10TU-1.8 | 功能描述:IC EEPROM 1KBIT 2MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT93C46-10TU-1.8 SL383 | 功能描述:IC EEPROM 1KBIT 2MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT93C46-10TU-1.8-T | 功能描述:IC EEPROM 1KBIT 2MHZ 8TSSOP 制造商:microchip technology 系列:- 包装:带卷（TR） 零件状态:停產 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:1Kb（128 x 8，64 x 16） 时钟频率:2MHz 写周期时间 - 字，页:10ms 存储器接口:SPI 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-TSSOP（0.173"，4.40mm 宽） 供应商器件封装:8-TSSOP 基本零件编号:AT93C46 标准包装:5,000 |
| AT93C46-10TU-2.7 | 功能描述:电可擦除可编程只读存储器 Serial 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT93C46-10TU-2.7 SL383 | 功能描述:IC EEPROM 1KBIT 2MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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