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参数资料
| 型号： | AT93C46Y5-10YU-2.7 |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | Three-wire Serial EEPROMs |
| 中文描述： | 64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| 封装： | 2 X 3 MM, 0.50 MM PITCH, LEAD AND HALOGEN FREE, DFN-8 |
| 文件页数： | 6/21页 |
| 文件大小： | 366K |
| 代理商： | AT93C46Y5-10YU-2.7 |
6
AT93C46/56/66
0172Z–SEEPR–9/05
Functional
Description
The AT93C46/56/66 is accessed via a simple and versatile three-wire serial communi-
cation interface. Device operation is controlled by seven instructions issued by the host
processor.
A valid instruction starts with a rising edge of CS
and consists of a start bit
(logic “1”) followed by the appropriate op code and the desired memory address
location.
READ (READ):
The Read (READ) instruction contains the address code for the mem-
ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic “0”) precedes the 8- or 16-bit data output string.
ERASE/WRITE ENABLE (EWEN):
To assure data integrity, the part automatically goes
into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before any programming instructions
can be carried out. Please note that once in the EWEN state, programming remains
enabled until an EWDS instruction is executed or V
CC
power is removed from the part.
ERASE (ERASE):
The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical “1” state. The self-timed erase cycle starts once the
Erase instruction and address are decoded. The DO pin outputs the Ready/Busy status
of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS
). A
logic “1” at pin DO indicates that the selected memory location has been erased and the
part is ready for another instruction.
WRITE (WRITE):
The Write (WRITE) instruction contains the 8 or 16 bits of data to be
written into the specified memory location. The self-timed programming cycle t
WP
starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
Read/Busy status of the part if CS is brought high after being kept low for a minimum of
250 ns (t
CS
). A logic “0” at DO indicates that programming is still in progress. A logic “1”
indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions.
A
Ready/Busy status cannot be obtained if the CS is brought high after the end of the self-
timed programming cycle tWP.
ERASE ALL (ERAL):
The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin
outputs the Ready/Busy status of the part if CS is brought high after being kept low for a
minimum of 250 ns (t
CS
). The ERAL instruction is valid only at V
CC
= 5.0V
±
10%.
WRITE ALL (WRAL)
: The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS
).
The WRAL instruction is valid only at V
CC
= 5.0V ±
10%.
ERASE/WRITE DISABLE (EWDS):
To protect against accidental data disturb, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the Read instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.
相关PDF资料 |
PDF描述 |
|---|---|
| AT93C56-10TI-1.8 | Three-wire Serial EEPROMs |
| AT93C56-10TI-2.7 | Three-wire Serial EEPROMs |
| AT93C56Y1-10YI-1.8 | Three-wire Serial EEPROMs |
| AT93C56Y1-10YI-2.7 | Three-wire Serial EEPROMs |
| AT93C66Y1-10YI-1.8 | Three-wire Serial EEPROMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT93C46Y6-10YH-1.8 | 功能描述:IC EEPROM 1KBIT 2MHZ 8DFN RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT93C56 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Three-wire Serial EEPROMs |
| AT93C56-10PA-2.7C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwire Serial EEPROM |
| AT93C56-10PA-5.0C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwire Serial EEPROM |
| AT93C56-10PC | 功能描述:电可擦除可编程只读存储器 1/2/4k 3-Wire Bus RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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