参数资料
型号: AT93C66A-10PI-1.8
厂商: Atmel
文件页数: 16/23页
文件大小: 0K
描述: IC EEPROM 4KBIT 2MHZ 8DIP
标准包装: 50
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K(512 x 8 或 256 x 16)
速度: 250kHz,1MHz,2MHz
接口: Microwire 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
8.3
8S2 – EIAJ SOIC
C
C
1
1
E
E
E1
E1
N
N
L
L
Top View
TOP VIEW
?
θ
e
e
A
b
A
b
End View
END VIEW
COMMON DIMENSIONS
(Unit of Measure =
COMMON DIMENSIONS mm)
(Unit of Measure = mm)
SYMBOL MIN NOM MAX
NOTE
NOM
A1
SYMBOL A MIN
1.70
MAX 2.16 NOTE
A1
A
A1 1.70
0.05
2.16 0.25
A1
b
b 0.05
C 0.35
0.35
0.15
0.25 0.48
0.48 0.35 5
5
5
D
C
D
D 0.15
E1 5.13
5.13
5.18
0.35 5.35 5
5.35 5.40
2, 3
D
Side View
SIDE VIEW
E1
E
L
θ
E
L
?
e
5.18
7.70
0.51
0?
7.70
0.51
0?
5.40
8.26
0.85
1.27 BSC
8?
8.26
0.85
8?
2, 3
4
e 1.27 BSC
Notes:  1.
2.
This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs are not included.
4
Notes: 1.
Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/ ? 0.005 mm.
3.
4.
2. 5.
It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
This drawing is for general position.
Determines the true geometric information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs aren't included.
8S2 , 8-lead, 0.209" Body, Plastic Small
8S2 C
Outline Package (EIAJ)
San Jose, CA 95131
04/07/06
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded. 10/7/03
4. Determines the true geometric position.
The NO. mm.0.007 to
5. Values b,C apply to plated terminal. TITLE standard thickness of the plating layer shall measure between DRAWING .021 REV.
2325 Orchard Parkway
R
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
DRAWING NO.
8S2
REV.
D
16
AT93C56A/66A
3378O–SEEPR–11/09
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