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参数资料
| 型号： | AT93C66AY6-10YH-1.8 SL383 |
| 厂商： | Atmel |
| 文件页数： | 16/23页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8DFN |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K（512 x 8 或 256 x 16） |
| 速度： | 250kHz，1MHz，2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UDFN 裸露焊盘 |
| 供应商设备封装： | 8-MLP（2x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | AT93C66AY6-10YH-1.8 SL383CT AT93C66AY6-10YH-1.8 SL383CT-ND AT93C66AY6-10YH-1.8CT |
8.3
8S2 – EIAJ SOIC
C
C
1
1
E
E
E1
E1
N
N
L
L
Top View
TOP VIEW
?
θ
e
e
A
b
A
b
End View
END VIEW
COMMON DIMENSIONS
(Unit of Measure =
COMMON DIMENSIONS mm)
(Unit of Measure = mm)
SYMBOL MIN NOM MAX
NOTE
NOM
A1
SYMBOL A MIN
1.70
MAX 2.16 NOTE
A1
A
A1 1.70
0.05
2.16 0.25
A1
b
b 0.05
C 0.35
0.35
0.15
0.25 0.48
0.48 0.35 5
5
5
D
C
D
D 0.15
E1 5.13
5.13
5.18
0.35 5.35 5
5.35 5.40
2, 3
D
Side View
SIDE VIEW
E1
E
L
θ
E
L
?
e
5.18
7.70
0.51
0?
7.70
0.51
0?
5.40
8.26
0.85
1.27 BSC
8?
8.26
0.85
8?
2, 3
4
e 1.27 BSC
Notes: 1.
2.
This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs are not included.
4
Notes: 1.
Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/ ? 0.005 mm.
3.
4.
2. 5.
It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
This drawing is for general position.
Determines the true geometric information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs aren't included.
8S2 , 8-lead, 0.209" Body, Plastic Small
8S2 C
Outline Package (EIAJ)
San Jose, CA 95131
04/07/06
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded. 10/7/03
4. Determines the true geometric position.
The NO. mm.0.007 to
5. Values b,C apply to plated terminal. TITLE standard thickness of the plating layer shall measure between DRAWING .021 REV.
2325 Orchard Parkway
R
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
DRAWING NO.
8S2
REV.
D
16
AT93C56A/66A
3378O–SEEPR–11/09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT93C66B-CUM-T | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Three-wire Serial Electrically Erasable Programmable Read-only Memory |
| AT93C66B-MAHM-T | 功能描述:电可擦除可编程只读存储器 4K (512x8/256x16) 3-WIRE NiPdAu, 1.7V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT93C66B-MAHM-T SL901 | 制造商:Atmel Corporation 功能描述:IC EEPROM 4KBIT 2MHZ 8MINIMAP |
| AT93C66B-MEHM-T | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Three-wire Serial Electrically Erasable Programmable Read-only Memory |
| AT93C66B-SSHM-B | 功能描述:电可擦除可编程只读存储器 4K (512x8/256x16) 3-WIRE, NiPdAu, 1.7V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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