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参数资料
| 型号： | ATF-10736-TR1 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | CERAMIC, 36, MICRO-X-4 |
| 文件页数： | 2/4页 |
| 文件大小： | 49K |
| 代理商： | ATF-10736-TR1 |
5-30
ATF-10736 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+5
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-7
IDS
Drain Current
mA
IDSS
PT
Total Power Dissipation [2,3]
mW
430
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature[4]
°C
-65to+175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/
°C for
TCASE > 25°C.
4. Storage above +150
°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175
°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10736-TR1
1000
7"
ATF-10736-STR
10
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10736 Typical Performance, T
A = 25°C
Thermal Resistance :
θ
jc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
m Spot Size[5]
ATF-10736 Noise Parameters: V
DS = 2 V, IDS = 25 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
1.0
0.8
0.88
41
0.52
2.0
0.9
0.75
85
0.27
4.0
1.2
0.48
159
0.08
6.0
1.4
0.46
-122
0.08
8.0
1.7
0.53
-71
0.43
FREQUENCY (GHz)
NF
O
(dB)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
FREQUENCY (GHz)
GAIN
(dB)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
2.0
6.0
4.0
8.0 10.0 12.0
GA
NFO
|S21|2
MSG
MAG
0.5
1.0
2.0
4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
FREQUENCY (GHz)
GAIN
(dB)
|S21|2
MSG
MAG
0.5
1.0
2.0
4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-10736-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| ATF-10736-STR | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| ATF-13284-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-13284-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-13284-STR | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-10736-TRI | 制造商:AGILENT 制造商全称:AGILENT 功能描述:0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10XXX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| ATF13036 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13100 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | CHIP |
| ATF-13100 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
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