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参数资料
型号： ATF-33143-TR1G
厂商： AGILENT TECHNOLOGIES INC
元件分类： 小信号晶体管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件页数： 5/18页
文件大小： 159K
代理商： ATF-33143-TR1G
13
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-33143 Typical Noise Parameters
VDS = 4 V, IDS = 80 mA
Freq.
Fmin
ΓΓΓΓΓ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.30
0.42
34.50
0.08
26.23
0.9
0.35
0.32
46.40
0.07
21.96
1.0
0.35
0.32
50.40
0.07
21.16
1.5
0.40
0.23
74.80
0.06
18.47
1.8
0.42
0.20
98.80
0.05
17.18
2.0
0.45
0.19
114.10
0.05
16.48
2.5
0.49
0.23
153.70
0.04
15.09
3.0
0.55
0.28
171.50
0.03
13.70
4.0
0.68
0.38
-156.70
0.04
11.85
5.0
0.75
0.48
-133.30
0.07
10.49
6.0
0.90
0.52
-110.70
0.13
9.27
7.0
1.00
0.57
-89.60
0.25
8.27
8.0
1.12
0.62
-70.80
0.43
7.28
9.0
1.19
0.67
-54.60
0.65
6.66
10.0
1.33
0.69
-40.80
0.85
6.31
ATF-33143 Typical Scattering Parameters, V
DS = 4 V, IDS = 80 mA
Freq.
S11
S21
S12
S22
MSG/MAG
(GHz)
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
(dB)
0.5
0.86
-77.20
23.39
14.76
132.20
-28.82
0.036
55.30
0.26
-125.40
26.13
0.8
0.77
-116.60
20.60
10.71
109.20
-25.86
0.051
43.40
0.34
-154.80
23.22
1.0
0.76
-124.00
19.93
9.91
104.80
-25.49
0.053
41.70
0.36
-159.50
22.72
1.5
0.73
-153.00
17.09
7.15
87.10
-23.86
0.064
35.20
0.39
-179.10
20.48
1.8
0.72
-165.80
15.66
6.06
78.90
-23.31
0.068
32.70
0.41
172.40
19.50
2.0
0.72
-172.90
14.77
5.47
74.00
-22.95
0.071
31.00
0.42
167.30
18.87
2.5
0.72
170.10
12.89
4.41
62.50
-22.03
0.079
27.20
0.45
158.50
17.47
3.0
0.73
157.40
11.27
3.66
53.00
-21.39
0.085
23.50
0.48
151.00
16.34
4.0
0.74
136.00
8.84
2.77
35.30
-20.00
0.100
15.30
0.50
138.80
13.59
5.0
0.75
116.70
7.09
2.26
17.70
-18.86
0.114
4.80
0.51
124.80
11.56
6.0
0.77
97.70
5.57
1.90
-0.70
-17.99
0.126
-7.80
0.52
108.40
10.17
7.0
0.79
80.00
4.00
1.58
-18.70
-17.47
0.134
-21.30
0.55
90.90
8.84
8.0
0.82
64.50
2.55
1.34
-34.50
-17.34
0.136
-32.80
0.58
75.40
7.93
9.0
0.83
50.50
1.36
1.17
-48.70
-17.03
0.141
-42.80
0.61
63.30
6.98
10.0
0.86
36.50
0.43
1.05
-63.80
-16.49
0.150
-54.60
0.63
51.60
6.96
11.0
0.88
21.70
-0.65
0.93
-79.90
-16.38
0.152
-67.80
0.66
38.10
6.73
12.0
0.90
7.40
-1.85
0.81
-95.60
-16.66
0.147
-80.60
0.70
22.10
6.26
13.0
0.91
-4.80
-3.39
0.68
-110.20
-17.21
0.138
-92.60
0.73
6.40
5.21
14.0
0.91
-15.40
-4.64
0.59
-122.00
-17.59
0.132
-101.10
0.76
-5.00
4.20
15.0
0.92
-27.30
-5.57
0.53
-134.80
-17.79
0.129
-111.20
0.79
-15.40
3.98
16.0
0.93
-40.40
-6.46
0.47
-147.60
-17.65
0.131
-121.90
0.81
-25.30
3.73
17.0
0.94
-52.20
-7.40
0.43
-161.40
-17.85
0.128
-134.30
0.82
-37.50
3.65
18.0
0.93
-61.20
-8.75
0.36
-172.10
-18.56
0.118
-143.10
0.84
-49.30
2.24
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|
2 vs.
Frequency at 4V, 80 mA.
MSG/MAG
and
|S
21
|
2 (dB)
020
40
30
20
10
0
-10
10
515
MSG
MAG
|S21|2
相关PDF资料
PDF描述
ATF-33143-BLK L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR2 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR1 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-TR2G X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-33143-BLKG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-33143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF331M4 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak
ATF-331M4-BLK 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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