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参数资料
| 型号： | ATF-34143-TR1 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 1/15页 |
| 文件大小： | 145K |
| 代理商： | ATF-34143-TR1 |
ATF-34143 Low Noise
Pseudomorphic HEMT in a Surface
Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in
Product Specifications
800 micron Gate Width
Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4 V, 60 mA (Typ.)
0.5 dB Noise Figure
17.5 dB Associated Gain
20 dBm Output Power at
1 dB Gain Compression
31.5 dBm Output 3rd Order
Intercept
Applications
Tower Mounted Amplifier
and Low Noise Amplifier for
GSM/TDMA/CDMA Base
Stations
LNA for Wireless LAN, WLL/
RLL and MMDS Applications
General Purpose Discrete
PHEMT for other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent’s ATF-34143 is a high
dynamic range, low noise PHEMT
housed in a 4-lead SC-70 (SOT-343)
surface mount plastic package.
Based on its featured performance,
ATF-34143 is ideal for the first
stage of base station LNA due to
the excellent combination of low
noise figure and high linearity[1].
The device is also suitable for
applications in Wireless LAN,
WLL/RLL, MMDS, and other
systems requiring super low noise
figure with good intercept in the
450 MHz to 10 GHz frequency
range.
Note:
1. From the same PHEMT FET family, the
larger geometry ATF-33143 may also be
considered either for the higher linearity
performance or easier circuit design for
stability in the lower frequency bands
(800-900 MHz).
Pin Connections and
Package Marking
Note:
Top View. Package marking
provides orientation and identification.
“4P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
GATE
4Px
SOURCE
DRAIN
SOURCE
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF34143TR2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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