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参数资料
| 型号： | ATF-35143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SOT-343, 4 PIN |
| 文件页数： | 14/19页 |
| 文件大小： | 126K |
| 代理商： | ATF-35143-TR1 |
4
ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. Bias at
2 GHz.[1,2]
OIP3,
P
1dB
(dBm)
060
30
25
20
15
10
5
0
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
IDSQ (mA)
Figure 7. OIP3 and P1dB vs. Bias at
900 MHz.[1,2]
OIP3,
P
1dB
(dBm)
060
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
30
25
20
15
10
5
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2 GHz.
[1]
G
a
(dB)
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
20
19
18
17
16
15
NF
(dB)
2.5
2
1.5
1
0.5
0
IDSQ (mA)
Figure 9. NF and Ga vs. Bias at
900 MHz.[1]
G
a
(dB)
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
24
22
20
18
16
14
NF
(dB)
2.5
2
1.5
1
0.5
0
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2 V, 15 mA at 2 GHz.[1]
P
1dB
(dBm)
080
25
20
15
10
5
0
-5
20
40
60
2 V
3 V
4 V
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2 V, 15 mA at 900 MHz.[1]
P
1dB
(dBm)
080
20
40
60
2 V
3 V
4 V
20
15
10
5
0
-5
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLKG | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2G | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-35143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-35143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35176 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
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