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参数资料
| 型号： | ATF-35143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 1/19页 |
| 文件大小： | 160K |
| 代理商： | ATF-35143-TR2 |
ATF-35143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product
Specifications
Low Cost Surface Mount Small
Plastic Package SOT-343 (4 lead
SC-70)
Tape-and-Reel Packaging Option
Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
0.4 dB Noise Figure
18 dB Associated Gain
11 dBm Output Power at 1 dB
Gain Compression
21 dBm Output 3rd Order Intercept
Applications
Low Noise Amplifier for Cellular/
PCS Handsets
LNA for WLAN, WLL/RLL, LEO,
and MMDS Applications
General Purpose Discrete PHEMT
for Other Ultra Low Noise
Applications
Surface Mount Package
SOT-343
Description
Avago’s ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifica-
tions for these devices at 2 GHz
are shown in the table below:
Pin Connections and
Package Marking
Part No.
Gate Width
Bias Point
NF (dB) Ga (dB) OIP3 (dBm)
ATF-33143
1600
4 V, 80 mA
0.5
15.0
33.5
ATF-34143
800
4 V, 60 mA
0.5
17.5
31.5
ATF-35143
400
2 V, 15 mA
0.4
18.0
21.0
GATE
5Px
SOURCE
DRAIN
SOURCE
Note:
Top View. Package marking
provides orientation and identification.
“5P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLKG | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-35143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35176 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
| ATF35576 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | MICRO-XVAR |
| ATF36077 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
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