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参数资料
| 型号： | ATF-36077-STR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 108K |
| 代理商： | ATF-36077-STR |
ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Features
PHEMT Technology
Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Low Parasitic Ceramic Microstrip Package
Tape-and-Reel Packing Option Available
Applications
12 GHz DBS LNB (Low Noise Block)
4 GHz TVRO LNB (Low Noise Block)
Ultra-Sensitive Low Noise Amplifiers
Pin Configuration
77 Package
ATF-36077 fig 1
NOISE
FIGURE
(dB)
0
FREQUENCY (GHz)
8
16
20
1.2
0.8
0.4
4
12
Ga
ASSOCIATED
GAIN
(dB)
NF
10
15
20
25
[1]
Note: 1. See Noise Parameter Table.
Description
AvagoTechnologies'ATF-36077isanultra-low-noisePseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
agedinalowparasitic,surface-mountableceramicpackage.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance,reducingthesensitivityofnoiseperformanceto
variations in input impedance match, making the design of
broadband low noise amplifiers much easier.The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite(DBS)Televisionsystems,C-bandTelevisionReceive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2-18 GHz frequency range.
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for VDS = 1.5V, ID = 10 mA.
1
GATE
3
DRAIN
2
SOURCE
4
SOURCE
36
0
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-36077-TR | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-STR | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-TRI | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-TRIG | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-TRI | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-36077-STR | 制造商:Avago Technologies 功能描述:BIPOLAR TRANSISTOR |
| ATF-36077-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36077-TRL | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36163 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF36163BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 3V V(BR)DSS | 40MA I(D) | SOT-363 |
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