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参数资料
| 型号： | ATF-36077-STR |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件页数： | 4/4页 |
| 文件大小： | 41K |
| 代理商： | ATF-36077-STR |
www.semiconductor.agilent.com
Data subject to change.
Copyright 1999 Agilent Technologies
Obsoletes 5962-0193E
5965-8726E (11/99)
ATF-36077 Typical Noise Parameters,
Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA
Freq.
Fmin[1]
Γ
opt
Rn/Zo
GHz
dB
Mag.
Ang.
-
1
0.30
0.95
12
0.40
2
0.30
0.90
25
0.20
4
0.30
0.81
51
0.17
6
0.30
0.73
76
0.13
8
0.37
0.66
102
0.09
10
0.44
0.60
129
0.05
12
0.50
0.54
156
0.03
14
0.56
0.48
-174
0.02
16
0.61
0.43
-139
0.05
18
0.65
0.39
-100
0.09
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses
that will be encountered when matching to the optimum reflection coefficient (
Γ
opt) at
these frequencies. The theoretical F
min values for these frequencies are: 0.10 dB at
2 GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from
associated s parameters, packaged device measurements at 12 GHz, and die level
measurements from 6 to 18 GHz.
Part Number Ordering Information
Part Number
No. of Devices
Container
ATF-36077-TRl[2]
1000
7" Reel
ATF-36077-STR
10
strip
Note:
2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in
“Communications Components” Designer‘s Catalog.
77 Package Dimensions
Figure 2. Maximum Available Gain,
Maximum Stable Gain and Insertion
Power Gain vs. Frequency. V
DS = 1.5 V,
ID = 10 mA.
GAIN
(dB)
0
25
0
FREQUENCY (GHz)
816
20
15
10
5
4
12
S21
MSG MAG
1.02
(0.040)
.51
(0.020)
1.78
(0.070)
1.22
(0.048)
.53
(0.021)
5.28
(0.208)
.10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
4
2
13
GATE
DRAIN
SOURCE
1.75
(0.069)
360
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-36077TR1G | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077STRG | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077STR | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-36077-STR | 制造商:Avago Technologies 功能描述:BIPOLAR TRANSISTOR |
| ATF-36077-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36077-TRL | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36163 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF36163BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 3V V(BR)DSS | 40MA I(D) | SOT-363 |
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