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参数资料
| 型号： | ATF-36077STR |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件页数： | 2/4页 |
| 文件大小： | 41K |
| 代理商： | ATF-36077STR |
2
ATF-36077 Electrical Specifications,
T
C = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NF
Noise Figure[1]
f = 12.0 GHz
dB
0.5
0.6
GA
Gain at NF[1]
f = 12.0 GHz
dB
11.0
12.0
gm
Transconductance
VDS = 1.5 V, VGS = 0 V
mS
50
55
Idss
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
15
25
45
Vp 10 %
Pinch-off Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-1.0
-0.35
-0.15
Note:
1. Measured in a fixed tuned environment with
Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
Thermal Resistance[2,3]:
θ
ch-c = 60°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Measured at Pdiss = 15 mW and
T
ch = 100°C.
3. Derate at 16.7 mW/
°C for T
C > 139°C.
ATF-36077 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain – Source Voltage
V
+3
VGS
Gate – Source Voltage
V
-3
VGD
Gate-Drain Voltage
V
-3.5
ID
Drain Current
mA
Idss
PT
Total Power Dissipation[3]
mW
180
Pin max
RF Input Power
dBm
+10
Tch
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
ATF-36077 Characterization Information,
T
C = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Typ.
NF
Noise Figure (Tuned Circuit)
f = 4 GHz
dB
0.3[2]
f = 12 GHz
dB
0.5
GA
Gain at Noise Figure (Tuned Circuit)
f = 4 GHz
dB
17
f = 12 GHz
dB
12
S12 off
Reverse Isolation
f = 12 GHz, VDS = 1.5 V, VGS = -2 V
dB
14
P1dB
Output Power at 1 dB Gain Compression
f = 4 GHz
dBm
5
f = 12 GHz
dBm
5
VGS 10 mA
Gate to Source Voltage for IDS = 10 mA
VDS = 1.5 V
V
-0.2
Note:
2. See noise parameter table.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-36077-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077TR1G | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077STRG | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-STRG | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-44100-GP1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-36077-STR | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36077-STR | 制造商:Avago Technologies 功能描述:BIPOLAR TRANSISTOR |
| ATF-36077-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36077-TRL | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36163 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
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