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参数资料
| 型号： | ATF-36163-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 6 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 110K |
| 代理商： | ATF-36163-TR1 |
2
ATF-36163 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage
V
+3
VGS
Gate - Source Voltage
V
-3
VGD
Gate Drain Voltage
V
-3.5
ID
Drain Current
mA
Idss
PT
Total Power Dissipation
mW
180
Pin max
RF Input Power
dBm
+10
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance:
θ
ch-c = 160
°C/W
Note:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
ATF-36163 Typical Parameters
TC = 25
°C, Z
O = 50
, V
ds = 2 V, Ids = 15 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Typ.
Fmin
Minimum Noise Figure (
Γ
source
= Γ
opt)
f = 4 GHz
dB
0.6
f = 12 GHz
dB
1.0
Ga
Associated Gain
f = 4 GHz
dB
15.8
f = 12 GHz
dB
9.4
Gmax
Maximum Available Gain[1]
f = 4 GHz
dB
17.2
f = 12 GHz
dB
10.9
P1dB
Output Power at 1 dB Gain Compression
f = 4 GHz
dBm
5
under the power matched condition
f = 12 GHz
dBm
5
VGS
Gate to Source Voltage for IDS = 15 mA
VDS = 2.0 V
V
-0.2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.
ATF-36163 Electrical Specifications
TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NF
Noise Figure[1]
f =12.0 GHz
dB
1.2
1.4[1]
G
Gain at NF[1]
f = 12.0 GHz
dB
9
10
gm
Transconductance
VDS = 1.5 V, VGS = 0 V
mS
50
60
Idss
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
15
25
40
Vp 10%
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-1.0
-0.35
-0.15
BVGDO
Gate Drain Breakdown Voltage
IG = 30
A
V
-3.5
Note:
1. Measured in a test circuit tuned for a typical device.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLK | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-36163-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-36163-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF38143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SC-70 (SOT-343) Low Noise +22 dBm OIP3 |
| ATF-38143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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