收藏本站
参数资料
型号： ATF-38143-BLK
元件分类： 小信号晶体管
英文描述： X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： PLASTIC, SC-70, 4 PIN
文件页数： 10/13页
文件大小： 126K
代理商： ATF-38143-BLK
6
ATF-38143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA
Freq.
Fmin
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.18
0.69
14
0.25
23.0
0.9
0.21
0.69
26
0.23
20.5
1.0
0.22
0.68
27
0.22
19.8
1.5
0.26
0.68
44
0.20
17.1
1.8
0.29
0.66
59
0.17
16.0
2.0
0.32
0.65
61
0.17
15.4
2.5
0.40
0.62
80
0.14
14.3
3.0
0.48
0.59
98
0.11
13.1
4.0
0.60
0.50
127
0.08
10.8
5.0
0.70
0.49
163
0.04
9.8
6.0
0.84
0.51
-169
0.04
8.7
7.0
0.96
0.53
-140
0.09
7.7
8.0
1.12
0.54
-111
0.20
6.8
9.0
1.27
0.59
-88
0.36
6.1
10.0
1.38
0.62
-68
0.60
6.0
FREQUENCY (GHz)
Figure 18. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 5 mA.
MSG/MAG
and
S
21
(dB)
04
2
8
14
16
10
12
618
MSG
MAG
S21
25
20
15
10
5
0
-5
-10
Notes:
1. Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-38143 Typical Scattering Parameters, V
DS = 2 V, IDS = 5 mA
Freq.
S11
S21
S12
S22
MSG/MAG
(GHz)
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
(dB)
0.5
0.98
-25
14.47
5.289
160
-26.56
0.047
73
0.67
-21
20.51
0.8
0.95
-40
14.19
5.122
148
-22.85
0.072
63
0.65
-32
18.52
1.0
0.93
-51
14.00
5.010
140
-21.21
0.087
56
0.62
-40
17.60
1.5
0.87
-75
13.28
4.613
122
-18.49
0.119
41
0.56
-58
15.88
1.8
0.82
-89
12.79
4.362
111
-17.52
0.133
33
0.52
-69
15.16
2.0
0.80
-98
12.45
4.192
105
-16.95
0.142
28
0.50
-77
14.70
2.5
0.75
-120
11.48
3.751
89
-16.19
0.155
16
0.44
-94
13.84
3.0
0.71
-139
10.48
3.342
76
-15.70
0.164
5
0.40
-110
13.09
4.0
0.67
-170
8.68
2.716
52
-15.44
0.169
-12
0.34
-138
12.06
5.0
0.66
162
7.24
2.302
30
-15.44
0.169
-27
0.31
-162
11.34
6.0
0.66
137
6.02
2.000
10
-15.60
0.166
-41
0.29
173
10.81
7.0
0.68
113
4.78
1.734
-10
-15.92
0.160
-55
0.28
146
10.35
8.0
0.70
92
3.51
1.498
-29
-16.59
0.148
-67
0.29
121
8.89
9.0
0.72
73
2.39
1.316
-47
-17.20
0.138
-77
0.32
103
7.33
10.0
0.74
56
1.51
1.190
-64
-17.46
0.134
-86
0.37
87
6.93
11.0
0.78
39
0.44
1.052
-83
-17.86
0.128
-97
0.42
66
6.66
12.0
0.82
23
-0.73
0.919
-100
-18.42
0.120
-106
0.47
47
6.22
13.0
0.83
10
-2.17
0.779
-117
-19.33
0.108
-115
0.52
28
4.93
14.0
0.85
-2
-3.54
0.665
-132
-20.00
0.100
-121
0.57
11
3.95
15.0
0.87
-16
-4.84
0.573
-147
-20.45
0.095
-129
0.63
0
3.58
16.0
0.88
-30
-6.16
0.492
-161
-20.82
0.091
-136
0.68
-12
2.90
17.0
0.88
-39
-7.51
0.421
-176
-21.11
0.088
-145
0.71
-26
1.98
18.0
0.89
-50
-9.07
0.352
173
-21.83
0.081
-151
0.75
-37
1.24
相关PDF资料
PDF描述
ATF-38143-TR2 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR1 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR2 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-BLK L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR2G X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-38143-BLKG 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-38143-BLKG 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR
ATF-38143-TR1 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-38143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-38143-TR2 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*