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参数资料
| 型号： | ATF-38143-BLK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 540K |
| 代理商： | ATF-38143-BLK |
5
PRELIMINARY DATA
This preliminary data is provided to assist you in the evaluation of product(s) currently under development and targeted for market release
shortly. Until Hewlett-Packard releases this product for general sales, HP reserves the right to alter prices, specifications, features,
capabilities, functions, release dates, and remove availability of the product(s) at any time.
ATF-38143 Typical Performance Curves
Figure 13. Fm in & Ga vs Freq & Temp @ 2V,
10mA
0
5
10
15
20
25
30
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
Frequency (GHz)
Ga(dB)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
Ga(85C)
Ga(-40C)
Ga(25C)
Fmi n(85C)
Fmi n(25C)
Fmi n(-40C)
Fmin
Ga
+85C
+25C
-40C
+85
+25
-40C
Figure 12. Fm in vs Frequency and Current
@ 2V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
Frequency (GHz)
Fmin
(dB)
5mA
10mA
20mA
Figure 14 Associated Gain vs. Frequency
and Current @ 2V
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Frequency (GHz)
Ga
(dB)
20mA
10mA
5mA
Figure 15 P1dB & OIP3 vs Freq & Temp @ 2V,
10mA
10
12
14
16
18
20
22
24
26
0
2000
4000
6000
8000
Frequency (MHz)
P1dB,
OIP3
(dBm)
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
Figure 16 NF, Gain, P1dB and OIP3 vs Ids
@2V, 3.9GHz
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Current, Ids (mA)
Gain
(dB),
P1dB
and
OIP3
(dBm)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
NF
(dB)
Gain
P1dB
OIP3
NF
Figure 17 NF, Gain, P1dB and OIP3 vs Ids
@2V, 5.8GHz
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Current, Ids (mA)
Gain
(dB),
P1dB
and
OIP3
(dBm)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
NF
(dB)
Gain
P1dB
OIP3
NF
Note:
1.
P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive
applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point.
At lower values of IDSQ the device is running closer to class B as power output approaches P1 dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current
source as is typically done with active biasing.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-38143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
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