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参数资料
| 型号： | ATF-38143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 540K |
| 代理商： | ATF-38143-TR1 |
2
PRELIMINARY DATA
This preliminary data is provided to assist you in the evaluation of product(s) currently under development and targeted for market release
shortly. Until Hewlett-Packard releases this product for general sales, HP reserves the right to alter prices, specifications, features,
capabilities, functions, release dates, and remove availability of the product(s) at any time.
Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute
Maximum
V
DS
Drain - Source Voltage [2]
V
4.5
V
GS
Gate - Source Voltage
V
-4
V
GD
Gate Drain Voltage
V
-4
I
DS
Drain Current
mA
Idss
P
diss
Total Power Dissipation
2
mW
580
P
in max.
RF Input Power
dBm
20
T
CH
Channel Temperature
°C
160
T
STG
Storage Temperature
°C
-65 to 160
θ
jc
Thermal Resistance
3
°C/W
165
ATF-38143 Product Consistency Distribution Charts
Figure 1. Typical I-V Curves
(Vgs = -0.2 V per step)
0
50
100
150
200
250
0
1
2
3
4
5
Vds (V)
Ids
(m
A)
+0.6 V
0.0 V
-0.6 V
Notes:
[1] Operation of this device above any one of
these parameters may cause permanent
damage.
[2] Source lead temperature is 25°C.
Derate 6 mW/°C for TL > 64°C.
[3] Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Note:
Distribution data sample size is 450 samples taken from 6 different wafers. Future wafers allocated
to this product may have nominal values anywhere within the upper and lower spec limits.
Measurements made on production test board. This circuit represents a trade-off between an optimum
noise match and a realizable match based on production test requirements. Circuit losses have been
de-embedded from actual measurements.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-38143-TR2 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLK | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-38143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF4 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 类别:连接器，互连式 >> 接线座 - Din 轨道，通道 系列:ATF 标准包装:1 系列:CLIPLINE UK 类型:断连 断开类型:保险丝，杆 位置数:3 级别数目:1 端子 - 宽度:18.0mm 端接类型:螺钉 电流 - IEC:32A 电压 - IEC:690V 电流 - UL:30A 电压 - UL:600V 线规或范围 - AWG:3-18 AWG 线规或范围 - mm²:1.5-25mm² 特点:- 颜色:黑 保险丝类型:小型，10.3mm x 38mm 材料 - 绝缘体:聚酰胺（PA），尼龙 材料可燃性额定值:UL94 V-0 剥线长度:12mm 其它名称:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF-44101 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
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