- 您现在的位置：买卖IC网 > PDF目录42903 > ATF-531P8-TR1G (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF资料下载
参数资料
| 型号： | ATF-531P8-TR1G |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件页数： | 12/16页 |
| 文件大小： | 142K |
| 代理商： | ATF-531P8-TR1G |
5
ATF-531P8 Typical Performance Curves (at 25
°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 11. Small Signal Gain vs. Ids and Vds
at 900 MHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 12. Small Signal Gain vs. Ids and Vds
at 2 GHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 13. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
3V
4V
5V
Ids (mA)
12
10
8
6
4
2
0
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 14. P1dB vs. Idq and Vds at 900 MHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBM)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBM)
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBM)
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-531P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF54143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
发布紧急采购，3分钟左右您将得到回复。