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参数资料
| 型号： | ATF-541M4-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件页数： | 1/17页 |
| 文件大小： | 731K |
| 代理商： | ATF-541M4-TR2 |
Description
Avago Technologies’ ATF541M4 is a high linearity, low
noise, single supply EPHEMT housed in a miniature
leadless package.
The ATF541M4’s small size and low profile makes it ideal
for the design of hybrid module and other spacecon
straint devices.
The device can be used in applications such as TMA and
front end LNA for Cellular/PCS and WCDMA base sta
tions, LNA and driver amplifiers for Wireless Data and
802.11b WLAN.
In addition, the device’s superior RF performance at
higher frequency makes it an ideal candidate for high
frequency applications such as WLL, 802.11a WLAN, 5–
6 GHz UNII and HIPERLAN applications.
Features
High linearity performance
Single Supply Enhancement Mode Technology[1]
Very low noise figure
Excellent uniformity in product specifications
800 micron gate width
Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm
TapeandReel packaging option available
Specifications
2 GHz; 3V, 60 mA (Typ.)
35.8 dBm output 3rd order intercept
21.4 dBm output power at 1 dB gain compression
0.5 dB noise figure
17.5 dB associated gain
Applications
Low Noise Amplifier and Driver Amplifier for Cellular/
PCS and WCDMA Base Stations
LNA and Driver Amplifier for WLAN, WLL/RLL and
MMDS applications
General purpose discrete EPHEMT for ultra low noise
applications in the 450 MHz to 10 GHz frequency
range
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and Package Marking
Note:
TopView. Package marking provides orientation, product identification
and date code.
“R” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
Source
Pin
Gate
Pin
Source
Pin 1
Drain
Pin 4
Rx
ATF-541M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF55143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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