参数资料
| 型号： | ATF16V8B-10PI |
| 厂商： | Atmel |
| 文件页数： | 13/26页 |
| 文件大小： | 0K |
| 描述： | IC PLD 10NS 20DIP |
| 标准包装： | 18 |
| 系列： | 16V8 |
| 可编程类型： | EE PLD |
| 宏单元数： | 8 |
| 输入电压： | 5V |
| 速度： | 10ns |
| 安装类型： | 通孔 |
| 封装/外壳： | 20-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 20-PDIP |
| 包装： | 管件 |
| 其它名称： | ATF16V8B10PI |
20
7707F–AVR–11/10
AT90USB82/162
5.3.4
The EEPROM Control Register – EECR
Bits 7..6 – Res: Reserved Bits
These bits are reserved bits in the AT90USB82/162 and will always read as zero.
Bits 5, 4 – EEPM1 and EEPM0: EEPROM Programming Mode Bits
The EEPROM Programming mode bit setting defines which programming action that will be trig-
gered when writing EEPE. It is possible to program data in one atomic operation (erase the old
value and program the new value) or to split the Erase and Write operations in two different
operations. The Programming times for the different modes are shown in Table 5-1. While EEPE
is set, any write to EEPMn will be ignored. During reset, the EEPMn bits will be reset to 0b00
unless the EEPROM is busy programming.
Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEPE is cleared.
Bit 2 – EEMPE: EEPROM Master Programming Enable
The EEMPE bit determines whether setting EEPE to one causes the EEPROM to be written.
When EEMPE is set, setting EEPE within four clock cycles will write data to the EEPROM at the
selected address If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEPE bit for an EEPROM write procedure.
Bit 1 – EEPE: EEPROM Programming Enable
The EEPROM Write Enable Signal EEPE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEPE bit must be written to one to write the value into the
EEPROM. The EEMPE bit must be written to one before a logical one is written to EEPE, other-
wise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
1.
Wait until EEPE becomes zero.
2.
Wait until SELFPRGEN in SPMCSR becomes zero.
3.
Write new EEPROM address to EEAR (optional).
Bit
7
6
5432
10
–
EEPM1
EEPM0
EERIE
EEMPE
EEPE
EERE
EECR
Read/Write
R
R/W
Initial Value
0
X
0
X
0
Table 5-1.
EEPROM Mode Bits
EEPM1
EEPM0
Programming
Time
Operation
0
3.4 ms
Erase and Write in one operation (Atomic Operation)
0
1
1.8 ms
Erase Only
1
0
1.8 ms
Write Only
1
–
Reserved for future use
相关PDF资料 |
PDF描述 |
|---|---|
| ATF16V8B-10JI | IC PLD 10NS 20PLCC |
| 3-1734839-2 | CONN FPC 32POS .5MM RT ANG SMD |
| IDT71V65803S100BQG8 | IC SRAM 9MBIT 100MHZ 165FBGA |
| MPC870VR80 | IC MPU POWERQUICC 80MHZ 256PBGA |
| MC68LC302AF16CT | IC MPU MULTI PROTOCOL 100-TQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF16V8B-10SC | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS250 GATES 20 PIN5V - 10NS RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10SI | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS 250 GATES EPLD 10NS IND TEMP RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10XC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Highperformance EE PLD |
| ATF16V8B-10XI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Electrically-Erasable PLD |
| ATF16V8B-15GC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Electrically-Erasable PLD |
发布紧急采购，3分钟左右您将得到回复。