参数资料
型号: ATF16V8B-10SI
厂商: Atmel
文件页数: 8/26页
文件大小: 0K
描述: IC PLD EE 10NS 20-SOIC
标准包装: 37
系列: 16V8
可编程类型: EE PLD
宏单元数: 8
输入电压: 5V
速度: 10ns
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC W
包装: 管件
其它名称: ATF16V8B10SI
16
7707F–AVR–11/10
AT90USB82/162
5.
AVR AT90USB82/162 Memories
This section describes the different memories in the AT90USB82/162. The AVR architecture has
two main memory spaces, the Data Memory and the Program Memory space. In addition, the
AT90USB82/162 features an EEPROM Memory for data storage. All three memory spaces are
linear and regular.
5.1
In-System Reprogrammable Flash Program Memory
The AT90USB82/162 contains 8K / 16K bytes On-chip In-System Reprogrammable Flash mem-
ory for program storage. Since all AVR instructions are 16 or 32 bits wide, the Flash is organized
as 4K x 16, 8K x 16. For software security, the Flash Program memory space is divided into two
sections, Boot Program section and Application Program section.
The Flash memory has an endurance of at least 100,000 write/erase cycles. The
AT90USB82/162 Program Counter (PC) is 16 bits wide, thus addressing the 8K / 16K program
memory locations. The operation of Boot Program section and associated Boot Lock bits for
software protection are described in detail in “Memory Programming” on page 243. “Memory
Programming” on page 243 contains a detailed description on Flash data serial downloading
using the SPI pins or the debugWIRE interface.
Constant tables can be allocated within the entire program memory address space (see the LPM
– Load Program Memory instruction description and ELPM - Extended Load Program Memory
instruction description).
Timing diagrams for instruction fetch and execution are presented in “Instruction Execution Tim-
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