参数资料
型号: ATMEGA325-16MUR
厂商: Atmel
文件页数: 17/85页
文件大小: 0K
描述: MCU AVR 32K FLASH 16MHZ 64QFN
产品培训模块: megaAVR Introduction
标准包装: 4,000
系列: AVR® ATmega
核心处理器: AVR
芯体尺寸: 8-位
速度: 16MHz
连通性: SPI,UART/USART,USI
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 54
程序存储器容量: 32KB(16K x 16)
程序存储器类型: 闪存
EEPROM 大小: 1K x 8
RAM 容量: 2K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 8x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 64-VFQFN 裸露焊盘
包装: 带卷 (TR)
24
2570N–AVR–05/11
ATmega325/3250/645/6450
The following code examples show one assembly and one C function for writing to the
EEPROM. The examples assume that interrupts are controlled (e.g. by disabling interrupts glob-
ally) so that no interrupts will occur during execution of these functions. The examples also
assume that no Flash Boot Loader is present in the software. If such code is present, the
EEPROM write function must also wait for any ongoing SPM command to finish.
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Table 8-1.
EEPROM Programming Time
Symbol
Number of Calibrated
RC Oscillator Cycles
Typical Programming Time
EEPROM write (from CPU)
27,072
3.4ms
Assembly Code Example
EEPROM_write:
; Wait for completion of previous write
sbic
EECR,EEWE
rjmp
EEPROM_write
; Set up address (r18:r17) in address register
out
EEARH, r18
out
EEARL, r17
; Write data (r16) to Data Register
out
EEDR,r16
; Write logical one to EEMWE
sbi
EECR,EEMWE
; Start eeprom write by setting EEWE
sbi
EECR,EEWE
ret
C Code Example
void
EEPROM_write(unsigned int uiAddress, unsigned char ucData)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEWE))
;
/* Set up address and Data Registers */
EEAR = uiAddress;
EEDR = ucData;
/* Write logical one to EEMWE */
EECR |= (1<<EEMWE);
/* Start eeprom write by setting EEWE */
EECR |= (1<<EEWE);
}
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