| 型号: | ATP113TL |
| 厂商: | SANYO SEMICONDUCTOR CO LTD |
| 元件分类: | JFETs |
| 英文描述: | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装: | HALOGEN FREE, ATPAK-3 |
| 文件页数: | 1/4页 |
| 文件大小: | 358K |
| 代理商: | ATP113TL |

相关PDF资料 |
PDF描述 |
|---|---|
| ATP212 | 35 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP212 | 35 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| ATS177-WL-B | MAGNETIC FIELD SENSOR-HALL EFFECT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATP113-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP114 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP114_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP114-TL-H | 功能描述:MOSFET SWITCHING MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP115SM | 制造商:CTS 制造商全称:CTS Corporation 功能描述:Surface Mount Quartz Crystal |