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| 型号： | ATP200SM-1 |
| 厂商： | CTS CORP |
| 元件分类： | 晶体 |
| 英文描述： | QUARTZ CRYSTAL RESONATOR, 20 MHz |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-4 |
| 文件页数： | 4/4页 |
| 文件大小： | 118K |
| 代理商： | ATP200SM-1 |
Document No. 008-0325-0
Page 4 - 4
Rev. A
CTS Electronic Components, Inc. 171 Covington Drive Bloomingdale, IL 60108
ATP-SM
Low Cost Quartz Crystal
QUALITY AND RELIABILITY
Quality systems meet or exceed the requirements of ISO 9000:2000 standards.
PACKAGING INFORMATION
DIMENSIONS IN MILLIMETERS
DIRECTION OF FEED
11.5
4.0
24.0
12.0
4.0
1.50
1.75
3.9
21.0
330
100
13.0
120°
25.5
2.0
Device quantity is 1,000 pieces per reel.
ENVIRONMENTAL SPECIFICATIONS
Temperature Cycle:
400 cycles from –55°C to +125°C, 10 minute dwell at each temperature, 1
minute transfer time between temperatures.
Mechanical Shock:
1,500g’s, 0.5mS duration, sinewave, 3 shocks each direction along 3
mutually perpendicular planes (18 total shocks).
Sinusoidal Vibration:
0.06 inches double amplitude, 10 to 55 Hz and 20g’s, 55 to 2,000 Hz, 3 cycles
each in 3 mutually perpendicular planes (9 times total).
Gross Leak:
No leak shall appear while immersed in an FC40 or equivalent liquid at
+125°C for 20 seconds.
Fine Leak:
Mass spectrometer leak rates less than 2x10-8 ATM cc/sec air equivalent.
Resistance to Solder Heat:
Product must survive 3 reflows of +260°C peak, 10 seconds maximum.
High Temperature Operating Bias:
2,000 hours at +125°C, disregarding frequency shift.
Frequency Aging:
1,000 hours at +85°C, maximum ±5 ppm shift.
Insulation Resistance:
500M Ohms @ 100VDC ±15VDC.
Moisture Sensitivity Level:
Level 1 per JEDEC J-STD-020.
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相关代理商/技术参数 |
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| ATP201 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP201_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP201-TL-H | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP201-V-TL-H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP202 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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