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参数资料
| 型号： | ATP200SM |
| 厂商： | CTS-Frequency Controls |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | CRYSTAL 20.000 MHZ SERIES SMD |
| 产品变化通告： | ATP Series Discontinuation 01/Mar/2007 |
| 标准包装： | 1,000 |
| 系列： | ATP-SM |
| 类型： | MHz 晶体 |
| 频率： | 20MHz |
| 频率稳定性： | ±50ppm |
| 频率公差： | ±50ppm |
| 负载电容： | 系列 |
| ESR（等效串联电阻）： | 50 欧姆 |
| 工作模式： | 基谐 |
| 工作温度： | -20°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-SOJ，9.40mm 间距 |
| 尺寸/尺寸： | 0.492" L x 0.180" W（12.50mm x 4.60mm） |
| 高度： | 0.146"（3.70mm） |
| 包装： | 散装 |
| 其它名称： | CTX617 |
ATP-SM
Low Cost Quartz Crystal
PACKAGING INFORMATION
DIMENSIONS IN MILLIMETERS
25.5
?13.0
2.0
4.0
12.0
?1.50
1.75
3.9
120°
11.5
24.0
4.0
DIRECTION OF FEED
Device quantity is 1,000 pieces per reel.
ENVIRONMENTAL SPECIFICATIONS
?21.0
?100
?330
Temperature Cycle:
Mechanical Shock:
Sinusoidal Vibration:
Gross Leak:
Fine Leak:
Resistance to Solder Heat:
High Temperature Operating Bias:
Frequency Aging:
Insulation Resistance:
Moisture Sensitivity Level:
400 cycles from –55°C to +125°C, 10 minute dwell at each temperature, 1
minute transfer time between temperatures.
1,500g’s, 0.5mS duration, ? sinewave, 3 shocks each direction along 3
mutually perpendicular planes (18 total shocks).
0.06 inches double amplitude, 10 to 55 Hz and 20g’s, 55 to 2,000 Hz, 3 cycles
each in 3 mutually perpendicular planes (9 times total).
No leak shall appear while immersed in an FC40 or equivalent liquid at
+125°C for 20 seconds.
Mass spectrometer leak rates less than 2x10 -8 ATM cc/sec air equivalent.
Product must survive 3 reflows of +260°C peak, 10 seconds maximum.
2,000 hours at +125°C, disregarding frequency shift.
1,000 hours at +85°C, maximum ±5 ppm shift.
500M Ohms @ 100V DC ±15V DC .
Level 1 per JEDEC J-STD-020.
QUALITY AND RELIABILITY
Quality systems meet or exceed the requirements of ISO 9000:2000 standards.
Document No. 008-0325-0
Page 4 - 4
Rev. A
? ? ? CTS Electronic Components, Inc. ?
171 Covington Drive
?
Bloomingdale, IL 60108
???
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATP201 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP201_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP201-TL-H | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP201-V-TL-H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP202 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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