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参数资料
| 型号： | ATP613TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE, ATPAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 379K |
| 代理商： | ATP613TL |
ATP613
No. A1903-1/5
Features
Reverse recovery time trr=60ns(typ.)
ON-resistance RDS(on)=1.55Ω(typ.)
Input Capacitance Ciss=350pF(typ.)
10V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
5.5
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
19
A
Source-to-Drain Diode Forward Current (DC)
IS
5.5
A
Source-to-Drain Diode Forward Current (Pulse)
ISP
PW≤10μs, duty cycle≤1%
19
A
Allowable Power Dissipation
PD
Tc=25°C70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
93
mJ
Avalanche Current *2
IAV
5.5
A
Note :
*1 VDD=99V, L=5mH, IAV=5.5A
*2 L≤5mH, Single pulse (Fig.1)
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1903
D1510QB TKIM TC-00002545
SANYO Semiconductors
DATA SHEET
ATP613
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
Package
: ATPAK
JEITA, JEDEC
: -
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
Electrical Connection
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
TL
ATP613
LOT No.
1
3
2,4
相关PDF资料 |
PDF描述 |
|---|---|
| ATP613 | 5.5 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP613 | 5.5 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP613TL | 5.5 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATS-1FREQ3 | QUARTZ CRYSTAL RESONATOR, 10 MHz - 32 MHz |
| ATS-2-RFREQ | QUARTZ CRYSTAL RESONATOR, 3.579 MHz - 3.999 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATP613-TL-H | 功能描述:MOSFET N-CH 500V 5.5A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ATP64A | 制造商:COOPER B-LINE 功能描述:FAN TRAY 2 600 CABINET 230V |
| ATP64A | 制造商:COOPER 功能描述:FAN TRAY 2 600 CABINET 230V |
| ATP68D-01CGM | 制造商:AAC 制造商全称:American Accurate Components, Inc. 功能描述:RF POWER ATTENUATOR |
| ATP68D-01DGM | 制造商:AAC 制造商全称:American Accurate Components, Inc. 功能描述:RF POWER ATTENUATOR |
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