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参数资料
| 型号： | ATS636LSETN-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 14/16页 |
| 文件大小： | 546K |
| 描述： | IC HALL EFFECT SWITCH TPOS 4-SIP |
| 产品培训模块： | Current Sensor |
| 标准包装： | 1 |
| 传感范围： | 0.25mm ~ 6mm |
| 类型： | 线性 - 可编程 |
| 电源电压： | 4.2 V ~ 24 V |
| 电流 - 电源： | 5.5mA |
| 电流 - 输出（最大）： | 20mA |
| 输出类型： | 数字，开路集电极 |
| 特点： | 可编程 |
| 工作温度： | -40°C ~ 150°C |
| 封装/外壳： | 4-SIP |
| 供应商设备封装： | 4-SIP |
| 包装： | 带卷 (TR) |
| 其它名称： | 620-1449-6 |
Programmable Back Biased Hall-Effect
Switch with TPOS Functionality
13
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
ATS636LSE
Power Derating SE Package
Due to internal power consumption, the junction temperature
of the IC (junction temperature, T
J
) is higher than the ambient
environment temperature, T
A
. To ensure that the device does not
operate above the maximum rated junction temperature use the
following calculations:
擳 = P
D
?R
窲A
Where:
P
D
= V
CC
?I
CC
4擳 = V
CC
?I
CC
?R
窲A
Where 擳 denotes the temperature rise resulting from the ICs
power dissipation.
T
J
= T
A
+ 擳
R
窲A
= 77癈/W
T
J
(max) = 165癈
Typical T
J
calculation:
T
A
= 25癈
V
CC
= 5 V
I
CC(on)
= 5.5 mA
P
D
= V
CC
?I
CC
= 5 V ?5.5 mA = 27.5 mW
擳 = P
D
?R
窲A
= 27.5 mW ?77癈/W = 2.0癈
T
J
= T
A
+ 擳 = 25癈 + 2.0癈 = 27.0癈
Maximum Allowable Power Dissipation Calculation:
T
J
= T
A
+ 擳
T
J
(max) = 165癈, if T
A
= 150癈
then:
165 = 150 + 擳
擳 = 15癈
擳 = P
D
?R
窲A
(R
窲A
= 77癈/W)
\ P
D
(max) = 15癈 / 77癈/W = 195 mW at T
A
= 150癈
Maximum V
CC
for P
D
(max) = 111 mW at T
A
= 150癈
P
D
= V
CC
?I
CC
, I
CC
= 10 mA (max) at 150癈
V
CC
= P
D
/ I
CC
= 195 mW / 5.5 mA = 35.4 V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
20 40 60 80 100 120 140 160 180
Temperature (癈)
Power Dissipation versus Ambient Temperature
(R
JA
= 77 篊/W)
2-layer PCB
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