参数资料
| 型号： | ATTINY13-20MUR |
| 厂商： | Atmel |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC MCU AVR 1K FLASH 10MHZ 20MLF |
| 产品培训模块： | tinyAVR Introduction |
| 标准包装： | 6,000 |
| 系列： | AVR® ATtiny |
| 核心处理器： | AVR |
| 芯体尺寸： | 8-位 |
| 速度： | 20MHz |
| 外围设备： | 欠压检测/复位，POR，PWM，WDT |
| 输入/输出数： | 6 |
| 程序存储器容量： | 1KB（512 x 16） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 64 x 8 |
| RAM 容量： | 64 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 4x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 20-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 其它名称： | ATTINY13-20MUR-ND |
17
2535JS–AVR–08/10
ATtiny13
8. Errata
The revision letter in this section refers to the revision of the ATtiny13 device.
8.1
ATtiny13 Rev. D
EEPROM can not be written below 1.9 Volt
1. EEPROM can not be written below 1.9 Volt
Writing the EEPROM at VCC below 1.9 volts might fail.
Problem Fix/Workaround
Do not write the EEPROM when VCC is below 1.9 volts.
8.2
ATtiny13 Rev. C
Revision C has not been sampled.
8.3
ATtiny13 Rev. B
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
debugWIRE communication not blocked by lock-bits
Watchdog Timer Interrupt disabled
EEPROM can not be written below 1.9 Volt
8.3.1
Wrong values read after Erase Only operation
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
ation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased loca-
tion is not read before it is programmed.
8.3.2
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
8.3.3
Device may lock for further programming
Special combinations of fuse bits will lock the device for further programming effectively
turning it into an OTP device. The following combinations of settings/fuse bits will cause this
effect:
– 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
– 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
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| ATtiny13-20PI | 功能描述:8位微控制器 -MCU AVR 1K FLASH 64B EE 64B SRAM ADC 5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ATTINY13-20PJ | 功能描述:IC MCU AVR 1K 5V 20MHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:AVR® ATtiny 标准包装:9 系列:87C 核心处理器:8051 芯体尺寸:8-位 速度:40/20MHz 连通性:UART/USART 外围设备:POR，WDT 输入/输出数:32 程序存储器容量:32KB（32K x 8） 程序存储器类型:OTP EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:- 振荡器型:内部 工作温度:0°C ~ 70°C 封装/外壳:40-DIP（0.600"，15.24mm） 包装:管件 |
| ATtiny13-20PU | 功能描述:8位微控制器 -MCU 1kB Flash 0.064kB EEPROM 6 I/O Pins RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ATTINY1320SI | 制造商:Atmel Corporation 功能描述: |
| ATtiny13-20SI | 功能描述:8位微控制器 -MCU AVR 1K FLASH 64B EE 64B SRAM ADC 5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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