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参数资料
| 型号： | AU5517DR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 运动控制电子 |
| 英文描述： | Dual Operational Transconductance Amplifier |
| 中文描述： | DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16 |
| 封装： | SOIC-16 |
| 文件页数： | 6/14页 |
| 文件大小： | 194K |
| 代理商： | AU5517DR2 |
NE5517, NE5517A, AU5517
http://onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1
20
0
-20
-40
-60
-80
-100
O
0.1 A 1 A
I
ABC
AMPLIFIER BIAS CURRENT ( A)
10 A
100 A
1000 A
VS =
±
15V
R
L
= 10k
OUTPUT NOISE
20kHz BW
V
IN
= 40mV
P-P
V
IN
= 80mV
P-P
V
S
=
±
15V
T
amb
= +25
°
C
C
IN
C
OUT
7
6
5
4
3
2
1
0
0.1 A
1 A
10 A
100 A
1000 A
C
AMPLIFIER BIAS CURRENT (I
ABC
)
0.1 A
1 A
10 A
100 A
1000 A
2000
1800
1600
1400
1200
1000
800
600
400
200
0
A
AMPLIFIER BIAS CURRENT (I
ABC
)
-55
°
C
+25
°
C
+125
°
C
O
100
10
1
0.1
0.01
1
10
100
1000
DIFFERENTIAL INPUT VOLTAGE (mV
P-P
)
600
500
400
300
200
100
0
10
100
1k
10k
100k
O
FREQUENCY (Hz)
I
ABC
= 1mA
I
ABC
= 100 A
Figure 12. Amplifier Bias Voltage vs.
Amplifier Bias Current
Figure 13. Input and Output
Capacitance
Figure 14. Distortion vs. Differential
Input Voltage
Figure 15. Voltage vs. Amplifier Bias Current
Figure 16. Noise vs. Frequency
I
ABC
= 1mA
R
L
= 10k
Figure 17. Leakage Current Test Circuit
Figure 18. Differential Input Current Test Circuit
Figure 19. Buffer V
BE
Test Circuit
4, 13
2, 15
3, 14
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
+
NE5517
11
6
1, 10
5, 12
A
+15V
15V
4V
V
V+
50k
V
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