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参数资料
| 型号： | AUIPS7121RTRL |
| 厂商： | International Rectifier |
| 文件页数： | 6/13页 |
| 文件大小： | 0K |
| 描述： | IC DVR CURRENT SENSE 1CH D2PAK-5 |
| 标准包装： | 3,000 |
| 类型： | 高端，电流感应 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 24 毫欧 |
| 电流 - 输出 / 通道： | 3.8A |
| 电流 - 峰值输出： | 60A |
| 电源电压： | 3.5 V ~ 5.9 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
AUIPS7121R
Truth Table
Op. Conditions
Normal mode
Normal mode
Open load
Open load
Short circuit to GND
Short circuit to GND
Over temperature
Over temperature
Input
H
L
H
L
H
L
H
L
Output
L
H
L
H
L
L
L
L
Ifb pin voltage
0V
I load x Rfb / Ratio
0V
Ifb leakage x Rifb
0V
I fault x Rifb(latched)
0V
I fault x Rifb (latched)
Operating voltage
Maximum Vcc voltage : this is the maximum voltage before the breakdown of the IC process.
Operating voltage : This is the Vcc range in which the functionality of the part is guaranteed. The AEC-Q100 qualification
is run at the maximum operating voltage specified in the datasheet.
Reverse battery
During the reverse battery the Mosfet is turned on if the input pin is powered with a diode in parallel of the input transistor.
Power dissipation in the IPS : P = Rdson rev * I load2 + Vcc2 / 250 ( internal input resistor ).
If the power dissipation is too high in Rifb, a diode in serial can be added to block the current.
Active clamp
The purpose of the active clamp is to limit the voltage across the MOSFET to a value below the body diode break down
voltage to reduce the amount of stress on the device during switching.
The temperature increase during active clamp can be estimated as follows:
? Tj = P CL ? Z TH ( t CLAMP )
Where: Z TH ( t CLAMP ) is the thermal impedance at t CLAMP and can be read from the thermal impedance curves given in the
data sheets.
P CL = V CL ? I CLavg : Power dissipation during active clamp
V CL = 65V : Typical V CLAMP value
I CLavg =
I CL : Average current during active clamp
2
t CL =
I CL : Active clamp duration
di
dt
di
dt
=
V Battery ? V CL : Demagnetization current
L
Figure 9 gives the maximum inductance versus the load current in the worst case : the part switches off after an over
temperature detection. If the load inductance exceeds the curve, a free wheeling diode is required.
Over-current protection
The threshold of the over-current protection is set in order to guarantee that the device is able to turn on a load with an
inrush current lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch
off for a lower current due to the over-temperature protection. This behavior is shown in Figure 11.
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIPS7121RTRR | 功能描述:功率驱动器IC CURRNT High Side 30mOhms 50A 65V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| AUIPS7125R | 功能描述:功率驱动器IC CURRNT High Side 30mOhms 50A 65V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| AUIPS7125RTR | 功能描述:功率驱动器IC CURRNT High Side 30mOhms 50A 65V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| AUIPS7125RTRL | 功能描述:功率驱动器IC CURRNT High Side 30mOhms 50A 65V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| AUIPS7125RTRR | 功能描述:功率驱动器IC CURRNT High Side 30mOhms 50A 65V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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