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参数资料
| 型号： | AUIRF1324S-7PTRL |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 24 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D2PAK-7 |
| 文件页数： | 1/12页 |
| 文件大小： | 290K |
| 代理商： | AUIRF1324S-7PTRL |
03/25/10
www.irf.com
1
HEXFET Power MOSFET
AUIRF1324S-7P
GD
S
Gate
Drain
Source
D2Pak 7 Pin
G
S
D
S
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
V(BR)DSS
24V
RDS(on) typ.
0.8m
max.
1.0m
ID (Silicon Limited) 429A c
ID (Package Limited) 240A
PD - 96296
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
300
1.6
-55 to + 175
± 20
2.0
Max.
429
303
1640
240
A
°C
°C/W
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF1324S-7P | 240 A, 24 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1324S | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1324L | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1324STRR | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1324STRL | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF1324S-7PTRR | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324STRL | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1324STRL7P | 功能描述:MOSFET NCH 24V 340A D2PAK 制造商:infineon technologies 系列:汽车级，AEC-Q101，HEXFET? 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:24V 电流 - 连续漏极（Id）（25°C 时）:340A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:1.65 毫欧 @ 195A，10V 不同 Id 时的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:240nC @ 10V 不同 Vds 时的输入电容（Ciss）:7590pF @ 24V 功率 - 最大值:300W 工作温度:-55°C ~ 175°C（TJ） 安装类型:表面贴装 封装/外壳:TO-263-3，D2Pak（2 引线+接片），TO-263AB 供应商器件封装:D2PAK（TO-263） 标准包装:800 |
| AUIRF1324STRR | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1324WL | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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