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参数资料
| 型号： | AUIRF2805 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 222K |
| 代理商： | AUIRF2805 |
AUIRF2805
HEXFET Power MOSFET
06/23/11
www.irf.com
1
PD - 97690
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF2805
S
D
G
D
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Max.
175
120
700
75
450
See Fig. 12a, 12b, 15, 16
-55 to + 175
300
10 lbf
yin (1.1Nym)
330
2.2
± 20
1220
V(BR)DSS
55V
RDS(on) typ.
3.9m
Ω
max
4.7m
Ω
ID (Silicon Limited)
175A
ID (Package Limited)
75A
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| AUIRF2907ZS-7P | 180 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF2907Z | 75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF2805 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-22 |
| AUIRF2805L | 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Planar Technology |
| AUIRF2805S | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2805S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-26 |
| AUIRF2805STRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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