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参数资料
| 型号： | AUIRF5305TRL |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/13页 |
| 文件大小： | 300K |
| 代理商： | AUIRF5305TRL |
HEXFET Power MOSFET
12/06/10
PD-96341
GD
S
Gate
Drain
Source
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
Description
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
www.irf.com
1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
S
D
G
V(BR)DSS
-55V
RDS(on) max.
0.065
ID
-31A
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D-Pak
AUIRFR5305
D
I-Pak
AUIRFU5305
AUIRFR5305
AUIRFU5305
S
D
G
S
D
G
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
A
IDM
Pulsed Drain Current
h
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
dh
mJ
IAR
Avalanche Current
h
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
eh
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.4
RθJA
Junction-to-Ambient (PCB mount)
–––
50
°C/W
RθJA
Junction-to-Ambient ***
–––
110
-55 to + 175
300 (1.6mm from case )
110
0.71
± 20
Max.
-31
-22
-110
-5.0
11
280
-16
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFU5305 | 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| AUIRFR5305 | 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRF5305TRR | 31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR5410TRL | 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR5410TR | 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF5305TRR | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| AUIRF540Z | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF540ZS | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF540ZSTRL | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF540ZSTRR | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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